Fabrication of high performance/highly functional field-effect transistor devices based on [6]phenacene thin films

Ritsuko Eguchi, Xuexia He, Shino Hamao, Hidenori Goto, Hideki Okamoto, Shin Gohda, Kaori Sato, Yoshihiro Kubozono

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Field-effect transistors (FETs) based on [6]phenacene thin films were fabricated with SiO2 and parylene gate dielectrics. These FET devices exhibit field-effect mobility in the saturation regime as high as 7.4 cm 2 V-1 s-1, which is one of the highest reported values for organic thin-film FETs. The two- and four-probe mobilities in the linear regime display nearly similar values, suggesting negligible contact resistance at 300 K. FET characteristics were investigated using two-probe and four-probe measurement modes at 50-300 K. The two-probe mobility of the saturation regime can be explained by the multiple shallow trap and release model, while the intrinsic mobility obtained by the four-probe measurement in the linear regime is better explained by the phenomenon of transport with charge carrier scattering at low temperatures. The FET device fabricated with a parylene gate dielectric on polyethylene terephthalate possesses both transparency and flexibility, implying feasibility of practical application of [6]phenacene FETs in flexible/transparent electronics. N-channel FET characteristics were also achieved in the [6]phenacene thin-film FETs using metals that possess a small work function for use as source/drain electrodes.

Original languageEnglish
Pages (from-to)20611-20617
Number of pages7
JournalPhysical Chemistry Chemical Physics
Volume15
Issue number47
DOIs
Publication statusPublished - Dec 21 2013

Fingerprint

Field effect transistors
field effect transistors
Fabrication
Thin films
fabrication
thin films
probes
Gate dielectrics
Thin film transistors
saturation
Polyethylene Terephthalates
polyethylene terephthalate
Contact resistance
contact resistance
Charge carriers
Transparency
charge carriers
flexibility
Electronic equipment
Metals

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Physics and Astronomy(all)

Cite this

Fabrication of high performance/highly functional field-effect transistor devices based on [6]phenacene thin films. / Eguchi, Ritsuko; He, Xuexia; Hamao, Shino; Goto, Hidenori; Okamoto, Hideki; Gohda, Shin; Sato, Kaori; Kubozono, Yoshihiro.

In: Physical Chemistry Chemical Physics, Vol. 15, No. 47, 21.12.2013, p. 20611-20617.

Research output: Contribution to journalArticle

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