Fabrication of flexible high-performance organic field-effect transistors using phenacene molecules and their application toward flexible CMOS inverters

Emanuela Pompei, Claudio Turchetti, Shino Hamao, Akari Miura, Hidenori Goto, Hideki Okamoto, Akihiko Fujiwara, Ritsuko Eguchi, Yoshihiro Kubozono

Research output: Contribution to journalArticle

Abstract

The transport properties of 3,10-ditetradecylpicene ((C14H29)2-picene) and [6]phenacene thin-film field-effect transistors (FETs) on Si and plastic substrates are reported, in which SiO2 and parylene are used as gate dielectrics, respectively. These devices show p-channel normally-off FET characteristics. A μ value of 1.34 cm2 V-1 s-1 is obtained in the (C14H29)2-picene thin-film FET, where 500 μm thick polyethylene terephthalate (PET) and 1 μm thick parylene are used as the substrate and gate dielectric, respectively. Moreover, excellent FET performance is obtained in the (C14H29)2-picene thin-film FET using a high-k gate dielectric, ZrO2, which is formed on a 350 μm thick PET substrate, showing p-channel normally-off FET properties and low voltage operation. The μ value reaches 6.31 cm2 V-1 s-1 in the FET device. The FET properties of N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDIC8) thin-film FETs formed on PET are also reported, showing n-channel normally-off FET characteristics. We report a bias stress effect on flexible [6]phenacene thin film FETs that are fabricated on a PEN substrate. Two types of experiments are performed for investigating the bias stress effect on FETs, and the bias stress effect under light irradiation is very different from that under no irradiation. This difference is well explained based on the hole-filling of trap states by electron excitation. We show the characteristics of a complementary MOS inverter (CMOS), constituting a [6]phenecene thin-film FET (p-channel) and a PTCDIC8 thin-film FET (n-channel) formed on the PET and PEN substrates, i.e., a flexible CMOS inverter. The maximum gain reaches 300. Furthermore, we report low-voltage operation for the flexible CMOS inverter, where ZrO2 is used as the gate dielectric. Through this study, we have achieved the fabrication of flexible thin-film FETs with a high μ and low voltage operation, and flexible CMOS inverters with a high gain as well as low operation voltage. This study could provide a basis for future practical/human-compatible electronic devices.

Original languageEnglish
Pages (from-to)6022-6033
Number of pages12
JournalJournal of Materials Chemistry C
Volume7
Issue number20
DOIs
Publication statusPublished - Jan 1 2019

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Organic field effect transistors
Field effect transistors
Fabrication
Molecules
Thin film transistors
Polyethylene Terephthalates
Gate dielectrics
Polyethylene terephthalates
Substrates
Electric potential
Irradiation

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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Fabrication of flexible high-performance organic field-effect transistors using phenacene molecules and their application toward flexible CMOS inverters. / Pompei, Emanuela; Turchetti, Claudio; Hamao, Shino; Miura, Akari; Goto, Hidenori; Okamoto, Hideki; Fujiwara, Akihiko; Eguchi, Ritsuko; Kubozono, Yoshihiro.

In: Journal of Materials Chemistry C, Vol. 7, No. 20, 01.01.2019, p. 6022-6033.

Research output: Contribution to journalArticle

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AU - Pompei, Emanuela

AU - Turchetti, Claudio

AU - Hamao, Shino

AU - Miura, Akari

AU - Goto, Hidenori

AU - Okamoto, Hideki

AU - Fujiwara, Akihiko

AU - Eguchi, Ritsuko

AU - Kubozono, Yoshihiro

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AB - The transport properties of 3,10-ditetradecylpicene ((C14H29)2-picene) and [6]phenacene thin-film field-effect transistors (FETs) on Si and plastic substrates are reported, in which SiO2 and parylene are used as gate dielectrics, respectively. These devices show p-channel normally-off FET characteristics. A μ value of 1.34 cm2 V-1 s-1 is obtained in the (C14H29)2-picene thin-film FET, where 500 μm thick polyethylene terephthalate (PET) and 1 μm thick parylene are used as the substrate and gate dielectric, respectively. Moreover, excellent FET performance is obtained in the (C14H29)2-picene thin-film FET using a high-k gate dielectric, ZrO2, which is formed on a 350 μm thick PET substrate, showing p-channel normally-off FET properties and low voltage operation. The μ value reaches 6.31 cm2 V-1 s-1 in the FET device. The FET properties of N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDIC8) thin-film FETs formed on PET are also reported, showing n-channel normally-off FET characteristics. We report a bias stress effect on flexible [6]phenacene thin film FETs that are fabricated on a PEN substrate. Two types of experiments are performed for investigating the bias stress effect on FETs, and the bias stress effect under light irradiation is very different from that under no irradiation. This difference is well explained based on the hole-filling of trap states by electron excitation. We show the characteristics of a complementary MOS inverter (CMOS), constituting a [6]phenecene thin-film FET (p-channel) and a PTCDIC8 thin-film FET (n-channel) formed on the PET and PEN substrates, i.e., a flexible CMOS inverter. The maximum gain reaches 300. Furthermore, we report low-voltage operation for the flexible CMOS inverter, where ZrO2 is used as the gate dielectric. Through this study, we have achieved the fabrication of flexible thin-film FETs with a high μ and low voltage operation, and flexible CMOS inverters with a high gain as well as low operation voltage. This study could provide a basis for future practical/human-compatible electronic devices.

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