Fabrication of field-effect transistor devices with new type of fullerodendron

Yuuki Sako, Yutaka Takaguchi, Yu Kusai, Nagano Takayuki, Kubozono Yoshihiro

Research output: Contribution to conference › Paper

Abstract

New types of n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO2/Si, polyimide/Au/poly(ethylene terephthalate) and polyvinyl alcohol/Au/ poly(ethylene terephthalate) substrates by using solution-processes. The value of field-effect mobility, μ, of the fullerodendron FET reachs 1.7 × 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.30 and 1.4 eV, respectively. The films of fullerodendron are not amorphous but crystalline. The electron transport is expected to occur through overlap of π-orbitals between the C60 moieties, and the channel conduction in the FET device follows thermally-activated hopping-transport mechanism with activation energy of 0.21 eV.

Original languageEnglish
Number of pages1
Publication statusPublished - Oct 19 2006
Event55th SPSJ Annual Meeting - Nagoya, Japan
Duration: May 24 2006 → May 26 2006

Other

Other55th SPSJ Annual Meeting
CountryJapan
CityNagoya
Period5/24/06 → 5/26/06

Keywords

  • C60
  • Field effect transistor
  • Fullerodendron
  • Organic semiconductor

ASJC Scopus subject areas

  • Engineering(all)

Access to Document

Fingerprint Dive into the research topics of 'Fabrication of field-effect transistor devices with new type of fullerodendron'. Together they form a unique fingerprint.

    • Cite this

    Sako, Y., Takaguchi, Y., Kusai, Y., Takayuki, N., & Yoshihiro, K. (2006). Fabrication of field-effect transistor devices with new type of fullerodendron. Paper presented at 55th SPSJ Annual Meeting, Nagoya, Japan.