Abstract
New types of n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO2/Si, polyimide/Au/poly(ethylene terephthalate) and polyvinyl alcohol/Au/ poly(ethylene terephthalate) substrates by using solution-processes. The value of field-effect mobility, μ, of the fullerodendron FET reachs 1.7 × 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.30 and 1.4 eV, respectively. The films of fullerodendron are not amorphous but crystalline. The electron transport is expected to occur through overlap of π-orbitals between the C60 moieties, and the channel conduction in the FET device follows thermally-activated hopping-transport mechanism with activation energy of 0.21 eV.
Original language | English |
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Pages | 1375 |
Number of pages | 1 |
Publication status | Published - 2006 |
Event | 55th SPSJ Annual Meeting - Nagoya, Japan Duration: May 24 2006 → May 26 2006 |
Other
Other | 55th SPSJ Annual Meeting |
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Country/Territory | Japan |
City | Nagoya |
Period | 5/24/06 → 5/26/06 |
Keywords
- C60
- Field effect transistor
- Fullerodendron
- Organic semiconductor
ASJC Scopus subject areas
- Engineering(all)