Abstract
New types of n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO2/Si, polyimide/Au/poly(ethylene terephthalate) and polyvinyl alcohol/Au/ poly(ethylene terephthalate) substrates by using solution-processes. The value of field-effect mobility, μ, of the fullerodendron FET reachs 1.7 × 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.30 and 1.4 eV, respectively. The films of fullerodendron are not amorphous but crystalline. The electron transport is expected to occur through overlap of π-orbitals between the C60 moieties, and the channel conduction in the FET device follows thermally-activated hopping-transport mechanism with activation energy of 0.21 eV.
| Original language | English |
|---|---|
| Title of host publication | Polymer Preprints, Japan |
| Pages | 1375 |
| Number of pages | 1 |
| Volume | 55 |
| Edition | 1 |
| Publication status | Published - 2006 |
| Event | 55th SPSJ Annual Meeting - Nagoya, Japan Duration: May 24 2006 → May 26 2006 |
Other
| Other | 55th SPSJ Annual Meeting |
|---|---|
| Country | Japan |
| City | Nagoya |
| Period | 5/24/06 → 5/26/06 |
Fingerprint
Keywords
- C60
- Field effect transistor
- Fullerodendron
- Organic semiconductor
ASJC Scopus subject areas
- Engineering(all)
Cite this
Fabrication of field-effect transistor devices with new type of fullerodendron. / Sako, Yuuki; Takaguchi, Yutaka; Kusai, Yu; Takayuki, Nagano; Kubozono, Yoshihiro.
Polymer Preprints, Japan. Vol. 55 1. ed. 2006. p. 1375.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Fabrication of field-effect transistor devices with new type of fullerodendron
AU - Sako, Yuuki
AU - Takaguchi, Yutaka
AU - Kusai, Yu
AU - Takayuki, Nagano
AU - Kubozono, Yoshihiro
PY - 2006
Y1 - 2006
N2 - New types of n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO2/Si, polyimide/Au/poly(ethylene terephthalate) and polyvinyl alcohol/Au/ poly(ethylene terephthalate) substrates by using solution-processes. The value of field-effect mobility, μ, of the fullerodendron FET reachs 1.7 × 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.30 and 1.4 eV, respectively. The films of fullerodendron are not amorphous but crystalline. The electron transport is expected to occur through overlap of π-orbitals between the C60 moieties, and the channel conduction in the FET device follows thermally-activated hopping-transport mechanism with activation energy of 0.21 eV.
AB - New types of n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO2/Si, polyimide/Au/poly(ethylene terephthalate) and polyvinyl alcohol/Au/ poly(ethylene terephthalate) substrates by using solution-processes. The value of field-effect mobility, μ, of the fullerodendron FET reachs 1.7 × 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.30 and 1.4 eV, respectively. The films of fullerodendron are not amorphous but crystalline. The electron transport is expected to occur through overlap of π-orbitals between the C60 moieties, and the channel conduction in the FET device follows thermally-activated hopping-transport mechanism with activation energy of 0.21 eV.
KW - C60
KW - Field effect transistor
KW - Fullerodendron
KW - Organic semiconductor
UR - http://www.scopus.com/inward/record.url?scp=33749824426&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33749824426&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:33749824426
VL - 55
SP - 1375
BT - Polymer Preprints, Japan
ER -