Fabrication of field-effect transistor devices with new type of fullerodendron

Yuuki Sako, Yutaka Takaguchi, Yu Kusai, Nagano Takayuki, Yoshihiro Kubozono

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

New types of n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO2/Si, polyimide/Au/poly(ethylene terephthalate) and polyvinyl alcohol/Au/ poly(ethylene terephthalate) substrates by using solution-processes. The value of field-effect mobility, μ, of the fullerodendron FET reachs 1.7 × 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.30 and 1.4 eV, respectively. The films of fullerodendron are not amorphous but crystalline. The electron transport is expected to occur through overlap of π-orbitals between the C60 moieties, and the channel conduction in the FET device follows thermally-activated hopping-transport mechanism with activation energy of 0.21 eV.

Original languageEnglish
Title of host publicationPolymer Preprints, Japan
Pages1375
Number of pages1
Volume55
Edition1
Publication statusPublished - 2006
Event55th SPSJ Annual Meeting - Nagoya, Japan
Duration: May 24 2006May 26 2006

Other

Other55th SPSJ Annual Meeting
CountryJapan
CityNagoya
Period5/24/065/26/06

Fingerprint

Field effect transistors
Fabrication
Polyethylene terephthalates
Polyvinyl alcohols
Polyimides
Activation energy
Crystalline materials
Thin films
Substrates

Keywords

  • C60
  • Field effect transistor
  • Fullerodendron
  • Organic semiconductor

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Sako, Y., Takaguchi, Y., Kusai, Y., Takayuki, N., & Kubozono, Y. (2006). Fabrication of field-effect transistor devices with new type of fullerodendron. In Polymer Preprints, Japan (1 ed., Vol. 55, pp. 1375)

Fabrication of field-effect transistor devices with new type of fullerodendron. / Sako, Yuuki; Takaguchi, Yutaka; Kusai, Yu; Takayuki, Nagano; Kubozono, Yoshihiro.

Polymer Preprints, Japan. Vol. 55 1. ed. 2006. p. 1375.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sako, Y, Takaguchi, Y, Kusai, Y, Takayuki, N & Kubozono, Y 2006, Fabrication of field-effect transistor devices with new type of fullerodendron. in Polymer Preprints, Japan. 1 edn, vol. 55, pp. 1375, 55th SPSJ Annual Meeting, Nagoya, Japan, 5/24/06.
Sako Y, Takaguchi Y, Kusai Y, Takayuki N, Kubozono Y. Fabrication of field-effect transistor devices with new type of fullerodendron. In Polymer Preprints, Japan. 1 ed. Vol. 55. 2006. p. 1375
Sako, Yuuki ; Takaguchi, Yutaka ; Kusai, Yu ; Takayuki, Nagano ; Kubozono, Yoshihiro. / Fabrication of field-effect transistor devices with new type of fullerodendron. Polymer Preprints, Japan. Vol. 55 1. ed. 2006. pp. 1375
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