Fabrication of field-effect transistor devices with new type of fullerodendron

Yuuki Sako; Yutaka Takaguchi; Yu Kusai; Nagano Takayuki; Kubozono Yoshihiro

Fabrication of field-effect transistor devices with new type of fullerodendron

Yuuki Sako, Yutaka Takaguchi, Yu Kusai, Nagano Takayuki, Kubozono Yoshihiro

Research output: Contribution to conference › Paper › peer-review

Abstract

New types of n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO₂/Si, polyimide/Au/poly(ethylene terephthalate) and polyvinyl alcohol/Au/ poly(ethylene terephthalate) substrates by using solution-processes. The value of field-effect mobility, μ, of the fullerodendron FET reachs 1.7 × 10^-3 cm² V^-1 s^-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.30 and 1.4 eV, respectively. The films of fullerodendron are not amorphous but crystalline. The electron transport is expected to occur through overlap of π-orbitals between the C₆₀ moieties, and the channel conduction in the FET device follows thermally-activated hopping-transport mechanism with activation energy of 0.21 eV.

Original language	English
Number of pages	1
Publication status	Published - Oct 19 2006
Event	55th SPSJ Annual Meeting - Nagoya, Japan Duration: May 24 2006 → May 26 2006

Other

Other	55th SPSJ Annual Meeting
Country	Japan
City	Nagoya
Period	5/24/06 → 5/26/06

Keywords

C60
Field effect transistor
Fullerodendron
Organic semiconductor

ASJC Scopus subject areas

Engineering(all)

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@conference{39e5144d8467447e8ad6d3584496e8d3,

title = "Fabrication of field-effect transistor devices with new type of fullerodendron",

abstract = "New types of n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO2/Si, polyimide/Au/poly(ethylene terephthalate) and polyvinyl alcohol/Au/ poly(ethylene terephthalate) substrates by using solution-processes. The value of field-effect mobility, μ, of the fullerodendron FET reachs 1.7 × 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.30 and 1.4 eV, respectively. The films of fullerodendron are not amorphous but crystalline. The electron transport is expected to occur through overlap of π-orbitals between the C60 moieties, and the channel conduction in the FET device follows thermally-activated hopping-transport mechanism with activation energy of 0.21 eV.",

keywords = "C60, Field effect transistor, Fullerodendron, Organic semiconductor",

author = "Yuuki Sako and Yutaka Takaguchi and Yu Kusai and Nagano Takayuki and Kubozono Yoshihiro",

year = "2006",

month = oct,

day = "19",

language = "English",

note = "55th SPSJ Annual Meeting ; Conference date: 24-05-2006 Through 26-05-2006",

}

TY - CONF

T1 - Fabrication of field-effect transistor devices with new type of fullerodendron

AU - Sako, Yuuki

AU - Takaguchi, Yutaka

AU - Kusai, Yu

AU - Takayuki, Nagano

AU - Yoshihiro, Kubozono

PY - 2006/10/19

Y1 - 2006/10/19

N2 - New types of n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO2/Si, polyimide/Au/poly(ethylene terephthalate) and polyvinyl alcohol/Au/ poly(ethylene terephthalate) substrates by using solution-processes. The value of field-effect mobility, μ, of the fullerodendron FET reachs 1.7 × 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.30 and 1.4 eV, respectively. The films of fullerodendron are not amorphous but crystalline. The electron transport is expected to occur through overlap of π-orbitals between the C60 moieties, and the channel conduction in the FET device follows thermally-activated hopping-transport mechanism with activation energy of 0.21 eV.

AB - New types of n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO2/Si, polyimide/Au/poly(ethylene terephthalate) and polyvinyl alcohol/Au/ poly(ethylene terephthalate) substrates by using solution-processes. The value of field-effect mobility, μ, of the fullerodendron FET reachs 1.7 × 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.30 and 1.4 eV, respectively. The films of fullerodendron are not amorphous but crystalline. The electron transport is expected to occur through overlap of π-orbitals between the C60 moieties, and the channel conduction in the FET device follows thermally-activated hopping-transport mechanism with activation energy of 0.21 eV.

KW - C60

KW - Field effect transistor

KW - Fullerodendron

KW - Organic semiconductor

UR - http://www.scopus.com/inward/record.url?scp=33749824426&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749824426&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:33749824426

T2 - 55th SPSJ Annual Meeting

Y2 - 24 May 2006 through 26 May 2006

ER -