Fabrication of field-effect transistor devices with fullerodendron by solution process

Haruka Kusai, Takayuki Nagano, Kumiko Imai, Yoshihiro Kubozono, Yuuki Sako, Yutaka Takaguchi, Akihiko Fujiwara, Nima Akima, Yoshihiro Iwasa, Shojun Hino

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

n -channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on Si O2 Si, polyimide/Au/poly(ethylene terephthalate), and polyvinyl alcohol/Au/poly(ethylene terephthalate) substrates by using solution processes. The value of field-effect mobility μ of the fullerodendron FET reaches 1.7× 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.15 and 1.4 eV, respectively. The channel conduction in the FET device follows thermally activated hopping-transport mechanism below 300 K.

Original languageEnglish
Article number173509
JournalApplied Physics Letters
Volume88
Issue number17
DOIs
Publication statusPublished - 2006

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field effect transistors
polyethylene terephthalate
fabrication
polyvinyl alcohol
polyimides
conduction
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Fabrication of field-effect transistor devices with fullerodendron by solution process. / Kusai, Haruka; Nagano, Takayuki; Imai, Kumiko; Kubozono, Yoshihiro; Sako, Yuuki; Takaguchi, Yutaka; Fujiwara, Akihiko; Akima, Nima; Iwasa, Yoshihiro; Hino, Shojun.

In: Applied Physics Letters, Vol. 88, No. 17, 173509, 2006.

Research output: Contribution to journalArticle

Kusai, H, Nagano, T, Imai, K, Kubozono, Y, Sako, Y, Takaguchi, Y, Fujiwara, A, Akima, N, Iwasa, Y & Hino, S 2006, 'Fabrication of field-effect transistor devices with fullerodendron by solution process', Applied Physics Letters, vol. 88, no. 17, 173509. https://doi.org/10.1063/1.2198098
Kusai, Haruka ; Nagano, Takayuki ; Imai, Kumiko ; Kubozono, Yoshihiro ; Sako, Yuuki ; Takaguchi, Yutaka ; Fujiwara, Akihiko ; Akima, Nima ; Iwasa, Yoshihiro ; Hino, Shojun. / Fabrication of field-effect transistor devices with fullerodendron by solution process. In: Applied Physics Letters. 2006 ; Vol. 88, No. 17.
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AU - Sako, Yuuki

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