Fabrication of field-effect transistor devices with fullerodendron by solution process

Haruka Kusai, Takayuki Nagano, Kumiko Imai, Yoshihiro Kubozono, Yuuki Sako, Yutaka Takaguchi, Akihiko Fujiwara, Nima Akima, Yoshihiro Iwasa, Shojun Hino

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

n -channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on Si O2 Si, polyimide/Au/poly(ethylene terephthalate), and polyvinyl alcohol/Au/poly(ethylene terephthalate) substrates by using solution processes. The value of field-effect mobility μ of the fullerodendron FET reaches 1.7× 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.15 and 1.4 eV, respectively. The channel conduction in the FET device follows thermally activated hopping-transport mechanism below 300 K.

Original languageEnglish
Article number173509
JournalApplied Physics Letters
Volume88
Issue number17
DOIs
Publication statusPublished - May 15 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Fabrication of field-effect transistor devices with fullerodendron by solution process'. Together they form a unique fingerprint.

  • Cite this

    Kusai, H., Nagano, T., Imai, K., Kubozono, Y., Sako, Y., Takaguchi, Y., Fujiwara, A., Akima, N., Iwasa, Y., & Hino, S. (2006). Fabrication of field-effect transistor devices with fullerodendron by solution process. Applied Physics Letters, 88(17), [173509]. https://doi.org/10.1063/1.2198098