n -channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on Si O2 Si, polyimide/Au/poly(ethylene terephthalate), and polyvinyl alcohol/Au/poly(ethylene terephthalate) substrates by using solution processes. The value of field-effect mobility μ of the fullerodendron FET reaches 1.7× 10-3 cm2 V-1 s-1 at 300 K. The mobility gap and optical gap have been estimated to be 0.15 and 1.4 eV, respectively. The channel conduction in the FET device follows thermally activated hopping-transport mechanism below 300 K.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)