Abstract
Field-effect transistor (FET) devices have been fabricated with thin films of fullerodendrons (I), (II) and (III) by using solution process. The n-channel normally-off FET properties have been observed in the fullerodendron (I) and (II) FET devices with SiO2/Si substrate. The values of field-effect mobility, μ, of the fullerodendron (I) and (II) FETs were determined to be 4.5 × 10-4 and 1.4 × 10-3 cm2 V-1 s-1, respectively, at 300 K. On the other hand, the n-channel normally-on FET properties have been observed in the fullerodendron (II) FET devices with three types of polymer gate insulators on poly(ehylene terephthalate) substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 3021-3024 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 243 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - Nov 1 2006 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Nagano, T., Kusai, H., Ochi, K., Ohta, T., Imai, K., Kubozono, Y., & Fujiwara, A. (2006). Fabrication of field-effect transistor devices with fullerene related materials. Physica Status Solidi (B) Basic Research, 243(13), 3021-3024. https://doi.org/10.1002/pssb.200669178