Fabrication of field-effect transistor devices with fullerene related materials

T. Nagano; H. Kusai; K. Ochi; T. Ohta; K. Imai; Y. Kubozono; A. Fujiwara

doi:10.1002/pssb.200669178

Fabrication of field-effect transistor devices with fullerene related materials

T. Nagano, H. Kusai, K. Ochi, T. Ohta, K. Imai, Y. Kubozono, A. Fujiwara

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

Field-effect transistor (FET) devices have been fabricated with thin films of fullerodendrons (I), (II) and (III) by using solution process. The n-channel normally-off FET properties have been observed in the fullerodendron (I) and (II) FET devices with SiO₂/Si substrate. The values of field-effect mobility, μ, of the fullerodendron (I) and (II) FETs were determined to be 4.5 × 10^-4 and 1.4 × 10^-3 cm² V^-1 s^-1, respectively, at 300 K. On the other hand, the n-channel normally-on FET properties have been observed in the fullerodendron (II) FET devices with three types of polymer gate insulators on poly(ehylene terephthalate) substrates.

Original language	English
Pages (from-to)	3021-3024
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	243
Issue number	13
DOIs	https://doi.org/10.1002/pssb.200669178
Publication status	Published - Nov 1 2006

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

Nagano, T., Kusai, H., Ochi, K., Ohta, T., Imai, K., Kubozono, Y., & Fujiwara, A. (2006). Fabrication of field-effect transistor devices with fullerene related materials. Physica Status Solidi (B) Basic Research, 243(13), 3021-3024. https://doi.org/10.1002/pssb.200669178

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abstract = "Field-effect transistor (FET) devices have been fabricated with thin films of fullerodendrons (I), (II) and (III) by using solution process. The n-channel normally-off FET properties have been observed in the fullerodendron (I) and (II) FET devices with SiO2/Si substrate. The values of field-effect mobility, μ, of the fullerodendron (I) and (II) FETs were determined to be 4.5 × 10-4 and 1.4 × 10-3 cm2 V-1 s-1, respectively, at 300 K. On the other hand, the n-channel normally-on FET properties have been observed in the fullerodendron (II) FET devices with three types of polymer gate insulators on poly(ehylene terephthalate) substrates.",

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AU - Nagano, T.

AU - Kusai, H.

AU - Ochi, K.

AU - Ohta, T.

AU - Imai, K.

AU - Kubozono, Y.

AU - Fujiwara, A.

PY - 2006/11/1

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N2 - Field-effect transistor (FET) devices have been fabricated with thin films of fullerodendrons (I), (II) and (III) by using solution process. The n-channel normally-off FET properties have been observed in the fullerodendron (I) and (II) FET devices with SiO2/Si substrate. The values of field-effect mobility, μ, of the fullerodendron (I) and (II) FETs were determined to be 4.5 × 10-4 and 1.4 × 10-3 cm2 V-1 s-1, respectively, at 300 K. On the other hand, the n-channel normally-on FET properties have been observed in the fullerodendron (II) FET devices with three types of polymer gate insulators on poly(ehylene terephthalate) substrates.

AB - Field-effect transistor (FET) devices have been fabricated with thin films of fullerodendrons (I), (II) and (III) by using solution process. The n-channel normally-off FET properties have been observed in the fullerodendron (I) and (II) FET devices with SiO2/Si substrate. The values of field-effect mobility, μ, of the fullerodendron (I) and (II) FETs were determined to be 4.5 × 10-4 and 1.4 × 10-3 cm2 V-1 s-1, respectively, at 300 K. On the other hand, the n-channel normally-on FET properties have been observed in the fullerodendron (II) FET devices with three types of polymer gate insulators on poly(ehylene terephthalate) substrates.

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Access to Document

10.1002/pssb.200669178