Fabrication of field-effect transistor devices with fullerene related materials

T. Nagano, H. Kusai, K. Ochi, T. Ohta, K. Imai, Y. Kubozono, A. Fujiwara

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Field-effect transistor (FET) devices have been fabricated with thin films of fullerodendrons (I), (II) and (III) by using solution process. The n-channel normally-off FET properties have been observed in the fullerodendron (I) and (II) FET devices with SiO2/Si substrate. The values of field-effect mobility, μ, of the fullerodendron (I) and (II) FETs were determined to be 4.5 × 10-4 and 1.4 × 10-3 cm2 V-1 s-1, respectively, at 300 K. On the other hand, the n-channel normally-on FET properties have been observed in the fullerodendron (II) FET devices with three types of polymer gate insulators on poly(ehylene terephthalate) substrates.

Original languageEnglish
Pages (from-to)3021-3024
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume243
Issue number13
DOIs
Publication statusPublished - Nov 1 2006

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Fabrication of field-effect transistor devices with fullerene related materials'. Together they form a unique fingerprint.

  • Cite this