Abstract
Field-effect transistor (FET) devices have been fabricated with thin films of fullerodendrons (I), (II) and (III) by using solution process. The n-channel normally-off FET properties have been observed in the fullerodendron (I) and (II) FET devices with SiO2/Si substrate. The values of field-effect mobility, μ, of the fullerodendron (I) and (II) FETs were determined to be 4.5 × 10-4 and 1.4 × 10-3 cm2 V-1 s-1, respectively, at 300 K. On the other hand, the n-channel normally-on FET properties have been observed in the fullerodendron (II) FET devices with three types of polymer gate insulators on poly(ehylene terephthalate) substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 3021-3024 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 243 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - Nov 2006 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Fabrication of field-effect transistor devices with fullerene related materials. / Nagano, T.; Kusai, H.; Ochi, K.; Ohta, T.; Imai, K.; Kubozono, Yoshihiro; Fujiwara, A.
In: Physica Status Solidi (B) Basic Research, Vol. 243, No. 13, 11.2006, p. 3021-3024.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of field-effect transistor devices with fullerene related materials
AU - Nagano, T.
AU - Kusai, H.
AU - Ochi, K.
AU - Ohta, T.
AU - Imai, K.
AU - Kubozono, Yoshihiro
AU - Fujiwara, A.
PY - 2006/11
Y1 - 2006/11
N2 - Field-effect transistor (FET) devices have been fabricated with thin films of fullerodendrons (I), (II) and (III) by using solution process. The n-channel normally-off FET properties have been observed in the fullerodendron (I) and (II) FET devices with SiO2/Si substrate. The values of field-effect mobility, μ, of the fullerodendron (I) and (II) FETs were determined to be 4.5 × 10-4 and 1.4 × 10-3 cm2 V-1 s-1, respectively, at 300 K. On the other hand, the n-channel normally-on FET properties have been observed in the fullerodendron (II) FET devices with three types of polymer gate insulators on poly(ehylene terephthalate) substrates.
AB - Field-effect transistor (FET) devices have been fabricated with thin films of fullerodendrons (I), (II) and (III) by using solution process. The n-channel normally-off FET properties have been observed in the fullerodendron (I) and (II) FET devices with SiO2/Si substrate. The values of field-effect mobility, μ, of the fullerodendron (I) and (II) FETs were determined to be 4.5 × 10-4 and 1.4 × 10-3 cm2 V-1 s-1, respectively, at 300 K. On the other hand, the n-channel normally-on FET properties have been observed in the fullerodendron (II) FET devices with three types of polymer gate insulators on poly(ehylene terephthalate) substrates.
UR - http://www.scopus.com/inward/record.url?scp=33751252815&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33751252815&partnerID=8YFLogxK
U2 - 10.1002/pssb.200669178
DO - 10.1002/pssb.200669178
M3 - Article
VL - 243
SP - 3021
EP - 3024
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 13
ER -