TY - JOUR
T1 - Fabrication of field-effect transistor devices with fullerene related materials
AU - Nagano, T.
AU - Kusai, H.
AU - Ochi, K.
AU - Ohta, T.
AU - Imai, K.
AU - Kubozono, Y.
AU - Fujiwara, A.
N1 - Copyright:
Copyright 2006 Elsevier B.V., All rights reserved.
PY - 2006/11
Y1 - 2006/11
N2 - Field-effect transistor (FET) devices have been fabricated with thin films of fullerodendrons (I), (II) and (III) by using solution process. The n-channel normally-off FET properties have been observed in the fullerodendron (I) and (II) FET devices with SiO2/Si substrate. The values of field-effect mobility, μ, of the fullerodendron (I) and (II) FETs were determined to be 4.5 × 10-4 and 1.4 × 10-3 cm2 V-1 s-1, respectively, at 300 K. On the other hand, the n-channel normally-on FET properties have been observed in the fullerodendron (II) FET devices with three types of polymer gate insulators on poly(ehylene terephthalate) substrates.
AB - Field-effect transistor (FET) devices have been fabricated with thin films of fullerodendrons (I), (II) and (III) by using solution process. The n-channel normally-off FET properties have been observed in the fullerodendron (I) and (II) FET devices with SiO2/Si substrate. The values of field-effect mobility, μ, of the fullerodendron (I) and (II) FETs were determined to be 4.5 × 10-4 and 1.4 × 10-3 cm2 V-1 s-1, respectively, at 300 K. On the other hand, the n-channel normally-on FET properties have been observed in the fullerodendron (II) FET devices with three types of polymer gate insulators on poly(ehylene terephthalate) substrates.
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U2 - 10.1002/pssb.200669178
DO - 10.1002/pssb.200669178
M3 - Article
AN - SCOPUS:33751252815
VL - 243
SP - 3021
EP - 3024
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 13
ER -