Fabrication of field-effect transistor devices with fullerene related materials

T. Nagano, H. Kusai, K. Ochi, T. Ohta, K. Imai, Yoshihiro Kubozono, A. Fujiwara

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Field-effect transistor (FET) devices have been fabricated with thin films of fullerodendrons (I), (II) and (III) by using solution process. The n-channel normally-off FET properties have been observed in the fullerodendron (I) and (II) FET devices with SiO2/Si substrate. The values of field-effect mobility, μ, of the fullerodendron (I) and (II) FETs were determined to be 4.5 × 10-4 and 1.4 × 10-3 cm2 V-1 s-1, respectively, at 300 K. On the other hand, the n-channel normally-on FET properties have been observed in the fullerodendron (II) FET devices with three types of polymer gate insulators on poly(ehylene terephthalate) substrates.

Original languageEnglish
Pages (from-to)3021-3024
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume243
Issue number13
DOIs
Publication statusPublished - Nov 2006

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Fullerenes
Field effect transistors
fullerenes
field effect transistors
Fabrication
fabrication
terephthalate
Substrates
Polymers
insulators
Thin films
polymers
thin films

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Fabrication of field-effect transistor devices with fullerene related materials. / Nagano, T.; Kusai, H.; Ochi, K.; Ohta, T.; Imai, K.; Kubozono, Yoshihiro; Fujiwara, A.

In: Physica Status Solidi (B) Basic Research, Vol. 243, No. 13, 11.2006, p. 3021-3024.

Research output: Contribution to journalArticle

Nagano, T. ; Kusai, H. ; Ochi, K. ; Ohta, T. ; Imai, K. ; Kubozono, Yoshihiro ; Fujiwara, A. / Fabrication of field-effect transistor devices with fullerene related materials. In: Physica Status Solidi (B) Basic Research. 2006 ; Vol. 243, No. 13. pp. 3021-3024.
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AU - Kubozono, Yoshihiro

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