Fabrication of field-effect transistor device with higher fullerene, C88

Takayuki Nagano, Hiroyuki Sugiyama, Eiji Kuwahara, Rie Watanabe, Haruka Kusai, Yoko Kashino, Yoshihiro Kubozono

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14 Citations (Scopus)

Abstract

A fullerene field-effect transistor (FET) device has been fabricated with thin films of C88, and n -channel normally on depletion-type FET properties have been found in this FET device. The C88 FET exhibited a high mobility, μ, of 2.5× 10-3 cm2 V-1 s-1 at 300 K, in fullerene FETs. The carrier transport showed a thermally activated hopping transport. The n -channel normally on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of C88 thin films.

Original languageEnglish
Article number023501
JournalApplied Physics Letters
Volume87
Issue number2
DOIs
Publication statusPublished - Jul 11 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Nagano, T., Sugiyama, H., Kuwahara, E., Watanabe, R., Kusai, H., Kashino, Y., & Kubozono, Y. (2005). Fabrication of field-effect transistor device with higher fullerene, C88. Applied Physics Letters, 87(2), [023501]. https://doi.org/10.1063/1.1994957