Fabrication of field-effect transistor device with higher fullerene, C88

Takayuki Nagano, Hiroyuki Sugiyama, Eiji Kuwahara, Rie Watanabe, Haruka Kusai, Yoko Kashino, Yoshihiro Kubozono

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A fullerene field-effect transistor (FET) device has been fabricated with thin films of C88, and n -channel normally on depletion-type FET properties have been found in this FET device. The C88 FET exhibited a high mobility, μ, of 2.5× 10-3 cm2 V-1 s-1 at 300 K, in fullerene FETs. The carrier transport showed a thermally activated hopping transport. The n -channel normally on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of C88 thin films.

Original languageEnglish
Article number023501
JournalApplied Physics Letters
Volume87
Issue number2
DOIs
Publication statusPublished - Jul 11 2005

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fullerenes
field effect transistors
fabrication
thin films
depletion

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Nagano, T., Sugiyama, H., Kuwahara, E., Watanabe, R., Kusai, H., Kashino, Y., & Kubozono, Y. (2005). Fabrication of field-effect transistor device with higher fullerene, C88. Applied Physics Letters, 87(2), [023501]. https://doi.org/10.1063/1.1994957

Fabrication of field-effect transistor device with higher fullerene, C88. / Nagano, Takayuki; Sugiyama, Hiroyuki; Kuwahara, Eiji; Watanabe, Rie; Kusai, Haruka; Kashino, Yoko; Kubozono, Yoshihiro.

In: Applied Physics Letters, Vol. 87, No. 2, 023501, 11.07.2005.

Research output: Contribution to journalArticle

Nagano, T, Sugiyama, H, Kuwahara, E, Watanabe, R, Kusai, H, Kashino, Y & Kubozono, Y 2005, 'Fabrication of field-effect transistor device with higher fullerene, C88', Applied Physics Letters, vol. 87, no. 2, 023501. https://doi.org/10.1063/1.1994957
Nagano T, Sugiyama H, Kuwahara E, Watanabe R, Kusai H, Kashino Y et al. Fabrication of field-effect transistor device with higher fullerene, C88. Applied Physics Letters. 2005 Jul 11;87(2). 023501. https://doi.org/10.1063/1.1994957
Nagano, Takayuki ; Sugiyama, Hiroyuki ; Kuwahara, Eiji ; Watanabe, Rie ; Kusai, Haruka ; Kashino, Yoko ; Kubozono, Yoshihiro. / Fabrication of field-effect transistor device with higher fullerene, C88. In: Applied Physics Letters. 2005 ; Vol. 87, No. 2.
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