Fabrication of C60 field-effect transistors with polyimide and Ba0.4Sr0.6Ti0.96O3 gate insulators

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)143506-1
Number of pages1
JournalAppl. Phys. Lett.
Volume87
Publication statusPublished - 2005

Cite this

Fabrication of C60 field-effect transistors with polyimide and Ba0.4Sr0.6Ti0.96O3 gate insulators. / Kubozono, Yoshihiro.

In: Appl. Phys. Lett., Vol. 87, 2005, p. 143506-1.

Research output: Contribution to journalArticle

@article{ab8b475c1cb84dcda8d032f999387d13,
title = "Fabrication of C60 field-effect transistors with polyimide and Ba0.4Sr0.6Ti0.96O3 gate insulators",
author = "Yoshihiro Kubozono",
year = "2005",
language = "English",
volume = "87",
pages = "143506--1",
journal = "Appl. Phys. Lett.",

}

TY - JOUR

T1 - Fabrication of C60 field-effect transistors with polyimide and Ba0.4Sr0.6Ti0.96O3 gate insulators

AU - Kubozono, Yoshihiro

PY - 2005

Y1 - 2005

M3 - Article

VL - 87

SP - 143506

EP - 143501

JO - Appl. Phys. Lett.

JF - Appl. Phys. Lett.

ER -