Fabrication of C 60 field-effect transistors with polyimide and Ba 0.4Sr 0.6Ti 0.96O 3 gate insulators

Yoshihiro Kubozono, Takayuki Nagano, Yusuke Haruyama, Eiji Kuwahara, Toshio Takayanagi, Kenji Ochi, Akihiko Fujiwara

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Abstract

A flexible C60 field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n -channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ∼ 10-2 cm2 V-1 s-1 at 300 K. Furthermore, the C60 FET has been fabricated with a high-dielectric Ba0.4 Sr0.6 Ti0.96 O3 (BST) gate insulator, showing n -channel properties; the μ value is estimated to be ∼ 10-4 cm2 V-1 s-1 at 300 K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C60 FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.

Original languageEnglish
Article number143506
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number14
DOIs
Publication statusPublished - Oct 3 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kubozono, Y., Nagano, T., Haruyama, Y., Kuwahara, E., Takayanagi, T., Ochi, K., & Fujiwara, A. (2005). Fabrication of C 60 field-effect transistors with polyimide and Ba 0.4Sr 0.6Ti 0.96O 3 gate insulators. Applied Physics Letters, 87(14), 1-3. [143506]. https://doi.org/10.1063/1.2081134