Fabrication of C 60 field-effect transistors with polyimide and Ba 0.4Sr 0.6Ti 0.96O 3 gate insulators

Yoshihiro Kubozono; Takayuki Nagano; Yusuke Haruyama; Eiji Kuwahara; Toshio Takayanagi; Kenji Ochi; Akihiko Fujiwara

doi:10.1063/1.2081134

Fabrication of C ₆₀ field-effect transistors with polyimide and Ba _0.4Sr _0.6Ti _0.96O ₃ gate insulators

Yoshihiro Kubozono, Takayuki Nagano, Yusuke Haruyama, Eiji Kuwahara, Toshio Takayanagi, Kenji Ochi, Akihiko Fujiwara

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

A flexible C60 field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n -channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ∼ 10-2 cm2 V-1 s-1 at 300 K. Furthermore, the C60 FET has been fabricated with a high-dielectric Ba0.4 Sr0.6 Ti0.96 O3 (BST) gate insulator, showing n -channel properties; the μ value is estimated to be ∼ 10-4 cm2 V-1 s-1 at 300 K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C60 FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.

Original language	English
Article number	143506
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	14
DOIs	https://doi.org/10.1063/1.2081134
Publication status	Published - Oct 3 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2081134

Cite this

Fabrication of C ₆₀ field-effect transistors with polyimide and Ba _0.4Sr _0.6Ti _0.96O ₃ gate insulators. / Kubozono, Yoshihiro; Nagano, Takayuki; Haruyama, Yusuke; Kuwahara, Eiji; Takayanagi, Toshio; Ochi, Kenji; Fujiwara, Akihiko.

In: Applied Physics Letters, Vol. 87, No. 14, 143506, 03.10.2005, p. 1-3.

Research output: Contribution to journal › Article › peer-review

@article{c542a7d666d741ee93306214388a6794,

title = "Fabrication of C 60 field-effect transistors with polyimide and Ba 0.4Sr 0.6Ti 0.96O 3 gate insulators",

abstract = "A flexible C60 field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n -channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ∼ 10-2 cm2 V-1 s-1 at 300 K. Furthermore, the C60 FET has been fabricated with a high-dielectric Ba0.4 Sr0.6 Ti0.96 O3 (BST) gate insulator, showing n -channel properties; the μ value is estimated to be ∼ 10-4 cm2 V-1 s-1 at 300 K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C60 FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.",

author = "Yoshihiro Kubozono and Takayuki Nagano and Yusuke Haruyama and Eiji Kuwahara and Toshio Takayanagi and Kenji Ochi and Akihiko Fujiwara",

note = "Funding Information: This work was partly supported by the Mitsubishi Foundation and a Grant-in-Aid (No. 15350089) from the Ministry of Education, Culture, Sports, Science and Technology, Japan.",

year = "2005",

month = oct,

day = "3",

doi = "10.1063/1.2081134",

language = "English",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Fabrication of C 60 field-effect transistors with polyimide and Ba 0.4Sr 0.6Ti 0.96O 3 gate insulators

AU - Kubozono, Yoshihiro

AU - Nagano, Takayuki

AU - Haruyama, Yusuke

AU - Kuwahara, Eiji

AU - Takayanagi, Toshio

AU - Ochi, Kenji

AU - Fujiwara, Akihiko

N1 - Funding Information: This work was partly supported by the Mitsubishi Foundation and a Grant-in-Aid (No. 15350089) from the Ministry of Education, Culture, Sports, Science and Technology, Japan.

PY - 2005/10/3

Y1 - 2005/10/3

N2 - A flexible C60 field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n -channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ∼ 10-2 cm2 V-1 s-1 at 300 K. Furthermore, the C60 FET has been fabricated with a high-dielectric Ba0.4 Sr0.6 Ti0.96 O3 (BST) gate insulator, showing n -channel properties; the μ value is estimated to be ∼ 10-4 cm2 V-1 s-1 at 300 K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C60 FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.

AB - A flexible C60 field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n -channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ∼ 10-2 cm2 V-1 s-1 at 300 K. Furthermore, the C60 FET has been fabricated with a high-dielectric Ba0.4 Sr0.6 Ti0.96 O3 (BST) gate insulator, showing n -channel properties; the μ value is estimated to be ∼ 10-4 cm2 V-1 s-1 at 300 K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C60 FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.

UR - http://www.scopus.com/inward/record.url?scp=28344453535&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28344453535&partnerID=8YFLogxK

U2 - 10.1063/1.2081134

DO - 10.1063/1.2081134

M3 - Article

AN - SCOPUS:28344453535

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 143506

ER -

Fabrication of C ₆₀ field-effect transistors with polyimide and Ba _0.4Sr _0.6Ti _0.96O ₃ gate insulators

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this