TY - JOUR
T1 - Fabrication of C 60 field-effect transistors with polyimide and Ba 0.4Sr 0.6Ti 0.96O 3 gate insulators
AU - Kubozono, Yoshihiro
AU - Nagano, Takayuki
AU - Haruyama, Yusuke
AU - Kuwahara, Eiji
AU - Takayanagi, Toshio
AU - Ochi, Kenji
AU - Fujiwara, Akihiko
N1 - Funding Information:
This work was partly supported by the Mitsubishi Foundation and a Grant-in-Aid (No. 15350089) from the Ministry of Education, Culture, Sports, Science and Technology, Japan.
PY - 2005/10/3
Y1 - 2005/10/3
N2 - A flexible C60 field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n -channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ∼ 10-2 cm2 V-1 s-1 at 300 K. Furthermore, the C60 FET has been fabricated with a high-dielectric Ba0.4 Sr0.6 Ti0.96 O3 (BST) gate insulator, showing n -channel properties; the μ value is estimated to be ∼ 10-4 cm2 V-1 s-1 at 300 K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C60 FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.
AB - A flexible C60 field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n -channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ∼ 10-2 cm2 V-1 s-1 at 300 K. Furthermore, the C60 FET has been fabricated with a high-dielectric Ba0.4 Sr0.6 Ti0.96 O3 (BST) gate insulator, showing n -channel properties; the μ value is estimated to be ∼ 10-4 cm2 V-1 s-1 at 300 K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C60 FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.
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U2 - 10.1063/1.2081134
DO - 10.1063/1.2081134
M3 - Article
AN - SCOPUS:28344453535
VL - 87
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
M1 - 143506
ER -