Fabrication of C 60 field-effect transistors with polyimide and Ba 0.4Sr 0.6Ti 0.96O 3 gate insulators

Yoshihiro Kubozono; Takayuki Nagano; Yusuke Haruyama; Eiji Kuwahara; Toshio Takayanagi; Kenji Ochi; Akihiko Fujiwara

doi:10.1063/1.2081134

Fabrication of C ₆₀ field-effect transistors with polyimide and Ba _0.4Sr _0.6Ti _0.96O ₃ gate insulators

Yoshihiro Kubozono, Takayuki Nagano, Yusuke Haruyama, Eiji Kuwahara, Toshio Takayanagi, Kenji Ochi, Akihiko Fujiwara

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

A flexible C60 field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n -channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ∼ 10-2 cm2 V-1 s-1 at 300 K. Furthermore, the C60 FET has been fabricated with a high-dielectric Ba0.4 Sr0.6 Ti0.96 O3 (BST) gate insulator, showing n -channel properties; the μ value is estimated to be ∼ 10-4 cm2 V-1 s-1 at 300 K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C60 FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.

Original language	English
Article number	143506
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	14
DOIs	https://doi.org/10.1063/1.2081134
Publication status	Published - Oct 3 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Fabrication of C ₆₀ field-effect transistors with polyimide and Ba _0.4Sr _0.6Ti _0.96O ₃ gate insulators. / Kubozono, Yoshihiro; Nagano, Takayuki; Haruyama, Yusuke; Kuwahara, Eiji; Takayanagi, Toshio; Ochi, Kenji; Fujiwara, Akihiko.

In: Applied Physics Letters, Vol. 87, No. 14, 143506, 03.10.2005, p. 1-3.

Research output: Contribution to journal › Article › peer-review

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title = "Fabrication of C 60 field-effect transistors with polyimide and Ba 0.4Sr 0.6Ti 0.96O 3 gate insulators",

abstract = "A flexible C60 field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n -channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ∼ 10-2 cm2 V-1 s-1 at 300 K. Furthermore, the C60 FET has been fabricated with a high-dielectric Ba0.4 Sr0.6 Ti0.96 O3 (BST) gate insulator, showing n -channel properties; the μ value is estimated to be ∼ 10-4 cm2 V-1 s-1 at 300 K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C60 FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.",

author = "Yoshihiro Kubozono and Takayuki Nagano and Yusuke Haruyama and Eiji Kuwahara and Toshio Takayanagi and Kenji Ochi and Akihiko Fujiwara",

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AU - Kubozono, Yoshihiro

AU - Nagano, Takayuki

AU - Haruyama, Yusuke

AU - Kuwahara, Eiji

AU - Takayanagi, Toshio

AU - Ochi, Kenji

AU - Fujiwara, Akihiko

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N2 - A flexible C60 field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n -channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ∼ 10-2 cm2 V-1 s-1 at 300 K. Furthermore, the C60 FET has been fabricated with a high-dielectric Ba0.4 Sr0.6 Ti0.96 O3 (BST) gate insulator, showing n -channel properties; the μ value is estimated to be ∼ 10-4 cm2 V-1 s-1 at 300 K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C60 FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.

AB - A flexible C60 field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n -channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ∼ 10-2 cm2 V-1 s-1 at 300 K. Furthermore, the C60 FET has been fabricated with a high-dielectric Ba0.4 Sr0.6 Ti0.96 O3 (BST) gate insulator, showing n -channel properties; the μ value is estimated to be ∼ 10-4 cm2 V-1 s-1 at 300 K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C60 FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.

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Fabrication of C ₆₀ field-effect transistors with polyimide and Ba _0.4Sr _0.6Ti _0.96O ₃ gate insulators

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