Abstract
In case of the cube textured (CUTE) Ag substrate, recrystallization process of as-rolled Ag substrate in various atmosphere changed surface flatness of the substrate. When the substrate was heated in a vacuum chamber with a oxygen partial pressure of less than 1 × 10-5 Torr at 600°C, the surface average roughness (Ra) of the substrate was less than 120 nm. Then the oxygen was introduced into the vacuum chamber to fabricate CeO2 buffer layer on the substrate by pulsed laser deposition. After the oxygen pressure reached to 50-150 mTorr, CeO2 layer was deposited on the CUTE Ag substrate immediately. By reducing the influence of oxygen to surface roughness of the substrate, Ra of the CeO2 buffered CUTE Ag substrate was 30 nm.
Original language | English |
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Pages (from-to) | 934-937 |
Number of pages | 4 |
Journal | Physica C: Superconductivity and its applications |
Volume | 357-360 |
DOIs | |
Publication status | Published - Sep 2001 |
Externally published | Yes |
Keywords
- Ag tape
- CeO buffer layer
- Metal organic chemical vapor deposition
- Pulsed laser deposition
- Surface roughness
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering