TY - JOUR
T1 - Fabrication of buffer layer for YBCO coated conductor on cube textured Ag substrate
AU - Yuasa, T.
AU - Kurosaki, H.
AU - Kim, S. B.
AU - Maeda, T.
AU - Higashiyama, K.
AU - Hirabayashi, I.
N1 - Funding Information:
This work was supported by the New Energy and Industrial Technology Development Organization (NEDO) as Collaborative Research and Development of Fundamental Technologies for superconductivity applications.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2001/9
Y1 - 2001/9
N2 - In case of the cube textured (CUTE) Ag substrate, recrystallization process of as-rolled Ag substrate in various atmosphere changed surface flatness of the substrate. When the substrate was heated in a vacuum chamber with a oxygen partial pressure of less than 1 × 10-5 Torr at 600°C, the surface average roughness (Ra) of the substrate was less than 120 nm. Then the oxygen was introduced into the vacuum chamber to fabricate CeO2 buffer layer on the substrate by pulsed laser deposition. After the oxygen pressure reached to 50-150 mTorr, CeO2 layer was deposited on the CUTE Ag substrate immediately. By reducing the influence of oxygen to surface roughness of the substrate, Ra of the CeO2 buffered CUTE Ag substrate was 30 nm.
AB - In case of the cube textured (CUTE) Ag substrate, recrystallization process of as-rolled Ag substrate in various atmosphere changed surface flatness of the substrate. When the substrate was heated in a vacuum chamber with a oxygen partial pressure of less than 1 × 10-5 Torr at 600°C, the surface average roughness (Ra) of the substrate was less than 120 nm. Then the oxygen was introduced into the vacuum chamber to fabricate CeO2 buffer layer on the substrate by pulsed laser deposition. After the oxygen pressure reached to 50-150 mTorr, CeO2 layer was deposited on the CUTE Ag substrate immediately. By reducing the influence of oxygen to surface roughness of the substrate, Ra of the CeO2 buffered CUTE Ag substrate was 30 nm.
KW - Ag tape
KW - CeO buffer layer
KW - Metal organic chemical vapor deposition
KW - Pulsed laser deposition
KW - Surface roughness
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U2 - 10.1016/S0921-4534(01)00446-4
DO - 10.1016/S0921-4534(01)00446-4
M3 - Article
AN - SCOPUS:0035451214
SN - 0921-4534
VL - 357-360
SP - 934
EP - 937
JO - Physica C: Superconductivity and its Applications
JF - Physica C: Superconductivity and its Applications
ER -