Fabrication of buffer layer for YBCO coated conductor on cube textured Ag substrate

T. Yuasa; H. Kurosaki; S. B. Kim; T. Maeda; K. Higashiyama; I. Hirabayashi

doi:10.1016/S0921-4534(01)00446-4

Fabrication of buffer layer for YBCO coated conductor on cube textured Ag substrate

T. Yuasa, H. Kurosaki, S. B. Kim, T. Maeda, K. Higashiyama, I. Hirabayashi

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In case of the cube textured (CUTE) Ag substrate, recrystallization process of as-rolled Ag substrate in various atmosphere changed surface flatness of the substrate. When the substrate was heated in a vacuum chamber with a oxygen partial pressure of less than 1 × 10^-5 Torr at 600°C, the surface average roughness (R_a) of the substrate was less than 120 nm. Then the oxygen was introduced into the vacuum chamber to fabricate CeO₂ buffer layer on the substrate by pulsed laser deposition. After the oxygen pressure reached to 50-150 mTorr, CeO₂ layer was deposited on the CUTE Ag substrate immediately. By reducing the influence of oxygen to surface roughness of the substrate, R_a of the CeO₂ buffered CUTE Ag substrate was 30 nm.

Original language	English
Pages (from-to)	934-937
Number of pages	4
Journal	Physica C: Superconductivity and its applications
Volume	357-360
DOIs	https://doi.org/10.1016/S0921-4534(01)00446-4
Publication status	Published - Sep 2001
Externally published	Yes

Keywords

Ag tape
CeO buffer layer
Metal organic chemical vapor deposition
Pulsed laser deposition
Surface roughness

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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title = "Fabrication of buffer layer for YBCO coated conductor on cube textured Ag substrate",

abstract = "In case of the cube textured (CUTE) Ag substrate, recrystallization process of as-rolled Ag substrate in various atmosphere changed surface flatness of the substrate. When the substrate was heated in a vacuum chamber with a oxygen partial pressure of less than 1 × 10-5 Torr at 600°C, the surface average roughness (Ra) of the substrate was less than 120 nm. Then the oxygen was introduced into the vacuum chamber to fabricate CeO2 buffer layer on the substrate by pulsed laser deposition. After the oxygen pressure reached to 50-150 mTorr, CeO2 layer was deposited on the CUTE Ag substrate immediately. By reducing the influence of oxygen to surface roughness of the substrate, Ra of the CeO2 buffered CUTE Ag substrate was 30 nm.",

keywords = "Ag tape, CeO buffer layer, Metal organic chemical vapor deposition, Pulsed laser deposition, Surface roughness",

author = "T. Yuasa and H. Kurosaki and Kim, {S. B.} and T. Maeda and K. Higashiyama and I. Hirabayashi",

year = "2001",

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T1 - Fabrication of buffer layer for YBCO coated conductor on cube textured Ag substrate

AU - Yuasa, T.

AU - Kurosaki, H.

AU - Kim, S. B.

AU - Maeda, T.

AU - Higashiyama, K.

AU - Hirabayashi, I.

PY - 2001/9

Y1 - 2001/9

N2 - In case of the cube textured (CUTE) Ag substrate, recrystallization process of as-rolled Ag substrate in various atmosphere changed surface flatness of the substrate. When the substrate was heated in a vacuum chamber with a oxygen partial pressure of less than 1 × 10-5 Torr at 600°C, the surface average roughness (Ra) of the substrate was less than 120 nm. Then the oxygen was introduced into the vacuum chamber to fabricate CeO2 buffer layer on the substrate by pulsed laser deposition. After the oxygen pressure reached to 50-150 mTorr, CeO2 layer was deposited on the CUTE Ag substrate immediately. By reducing the influence of oxygen to surface roughness of the substrate, Ra of the CeO2 buffered CUTE Ag substrate was 30 nm.

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KW - Ag tape

KW - CeO buffer layer

KW - Metal organic chemical vapor deposition

KW - Pulsed laser deposition

KW - Surface roughness

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