Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene

Eiji Kuwahara, Yoshihiro Kubozono, Tomoko Hosokawa, Takayuki Nagano, Kosuke Masunari, Akihiko Fujiwara

    Research output: Contribution to journalArticlepeer-review

    70 Citations (Scopus)


    Ambipolar field-effect transistor (FET) device was fabricated with heterostructure of thin films of C60 and pentacene. Three types of device structures in the C60/pentacene heterostructure FET device were studied in order to realize the best ambipolar properties. In the middle-contact type FET device of 60 and pentacene, the mobility μ. in p-channel operation was estimated to be 6.8 cc 10-2 cm 2 V-1 s-1, while the μ, in n-channel operation was 1.3 × 10-3 cm2 V-1 s -1. This ambipolar FET device is available for a practical building-block to form CMOS integrated circuits with low-power consumption, good-noise margins, and ease of design.

    Original languageEnglish
    Pages (from-to)4765-4767
    Number of pages3
    JournalApplied Physics Letters
    Issue number20
    Publication statusPublished - Nov 15 2004

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)


    Dive into the research topics of 'Fabrication of ambipolar field-effect transistor device with heterostructure of C<sub>60</sub> and pentacene'. Together they form a unique fingerprint.

    Cite this