Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene

Eiji Kuwahara, Yoshihiro Kubozono, Tomoko Hosokawa, Takayuki Nagano, Kosuke Masunari, Akihiko Fujiwara

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

Ambipolar field-effect transistor (FET) device was fabricated with heterostructure of thin films of C60 and pentacene. Three types of device structures in the C60/pentacene heterostructure FET device were studied in order to realize the best ambipolar properties. In the middle-contact type FET device of 60 and pentacene, the mobility μ. in p-channel operation was estimated to be 6.8 cc 10-2 cm 2 V-1 s-1, while the μ, in n-channel operation was 1.3 × 10-3 cm2 V-1 s -1. This ambipolar FET device is available for a practical building-block to form CMOS integrated circuits with low-power consumption, good-noise margins, and ease of design.

Original languageEnglish
Pages (from-to)4765-4767
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number20
DOIs
Publication statusPublished - Nov 15 2004

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field effect transistors
fabrication
integrated circuits
margins
CMOS
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene. / Kuwahara, Eiji; Kubozono, Yoshihiro; Hosokawa, Tomoko; Nagano, Takayuki; Masunari, Kosuke; Fujiwara, Akihiko.

In: Applied Physics Letters, Vol. 85, No. 20, 15.11.2004, p. 4765-4767.

Research output: Contribution to journalArticle

Kuwahara, Eiji ; Kubozono, Yoshihiro ; Hosokawa, Tomoko ; Nagano, Takayuki ; Masunari, Kosuke ; Fujiwara, Akihiko. / Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene. In: Applied Physics Letters. 2004 ; Vol. 85, No. 20. pp. 4765-4767.
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