Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene

Eiji Kuwahara, Yoshihiro Kubozono, Tomoko Hosokawa, Takayuki Nagano, Kosuke Masunari, Akihiko Fujiwara

Research output: Contribution to journalArticle

70 Citations (Scopus)

Abstract

Ambipolar field-effect transistor (FET) device was fabricated with heterostructure of thin films of C60 and pentacene. Three types of device structures in the C60/pentacene heterostructure FET device were studied in order to realize the best ambipolar properties. In the middle-contact type FET device of 60 and pentacene, the mobility μ. in p-channel operation was estimated to be 6.8 cc 10-2 cm 2 V-1 s-1, while the μ, in n-channel operation was 1.3 × 10-3 cm2 V-1 s -1. This ambipolar FET device is available for a practical building-block to form CMOS integrated circuits with low-power consumption, good-noise margins, and ease of design.

Original languageEnglish
Pages (from-to)4765-4767
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number20
DOIs
Publication statusPublished - Nov 15 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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