Fabrication of a logic gate circuit based on ambipolar field-effect transistors with thin films of C60 and pentacene

Eiji Kuwahara, Haruka Kusai, Takayuki Nagano, Toshio Takayanagi, Yoshihiro Kubozono

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Ambipolar field-effect transistor (FET) devices were fabricated with a heterostructure of C60 and pentacene, and their p- and n-channel field-effect mobilities were studied as a function of thickness of pentacene thin-films. The observed dependences of the μ values were interpreted in terms of the morphology of the thin films and the band structure of C 60/pentacene heterostructure. A complementary metal-oxide- semiconductor (CMOS) circuit was fabricated by integration of two ambipolar FETs, aiming at realization of a new CMOS inverter circuit composed of FETs with the same device structure. The gain of four, the threshold voltage of 85 V, and the complex output characteristics were explained on the basis of the properties of the component FET devices.

Original languageEnglish
Pages (from-to)379-383
Number of pages5
JournalChemical Physics Letters
Volume413
Issue number4-6
DOIs
Publication statusPublished - Sep 26 2005
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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