TY - JOUR
T1 - Fabrication of a logic gate circuit based on ambipolar field-effect transistors with thin films of C60 and pentacene
AU - Kuwahara, Eiji
AU - Kusai, Haruka
AU - Nagano, Takayuki
AU - Takayanagi, Toshio
AU - Kubozono, Yoshihiro
N1 - Funding Information:
This work was partly supported by Mitsubishi Foundation and a Grant-in-Aid (15350089) of Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2005/9/26
Y1 - 2005/9/26
N2 - Ambipolar field-effect transistor (FET) devices were fabricated with a heterostructure of C60 and pentacene, and their p- and n-channel field-effect mobilities were studied as a function of thickness of pentacene thin-films. The observed dependences of the μ values were interpreted in terms of the morphology of the thin films and the band structure of C 60/pentacene heterostructure. A complementary metal-oxide- semiconductor (CMOS) circuit was fabricated by integration of two ambipolar FETs, aiming at realization of a new CMOS inverter circuit composed of FETs with the same device structure. The gain of four, the threshold voltage of 85 V, and the complex output characteristics were explained on the basis of the properties of the component FET devices.
AB - Ambipolar field-effect transistor (FET) devices were fabricated with a heterostructure of C60 and pentacene, and their p- and n-channel field-effect mobilities were studied as a function of thickness of pentacene thin-films. The observed dependences of the μ values were interpreted in terms of the morphology of the thin films and the band structure of C 60/pentacene heterostructure. A complementary metal-oxide- semiconductor (CMOS) circuit was fabricated by integration of two ambipolar FETs, aiming at realization of a new CMOS inverter circuit composed of FETs with the same device structure. The gain of four, the threshold voltage of 85 V, and the complex output characteristics were explained on the basis of the properties of the component FET devices.
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U2 - 10.1016/j.cplett.2005.07.096
DO - 10.1016/j.cplett.2005.07.096
M3 - Article
AN - SCOPUS:24644465961
VL - 413
SP - 379
EP - 383
JO - Chemical Physics Letters
JF - Chemical Physics Letters
SN - 0009-2614
IS - 4-6
ER -