Fabrication and characterization of field-effect transistor device with C2v isomer of Pr@C82

Takayuki Nagano, Eiji Kuwahara, Toshio Takayanagi, Yoshihiro Kubozono, Akihiko Fujiwara

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24 Citations (Scopus)


A field-effect transistor (FET) device was fabricated with thin films of C2v isomer of Pr@C82. This device apparently showed n-channel normally on type FET properties, where non-zero current was observed at the gate-source voltage, VGS, of 0 V. Normally off FET properties were observed by subtraction of the non-zero current from the drain current. Thus the normally on properties are ascribed to the high bulk current caused by the small energy gap of ≈0.3 eV. The field-effect mobility for this FET was 1.5 × 10-4 cm2 V-1 s-1 at 320 K, being comparable to those of other endohedral metallofullerene FET devices.

Original languageEnglish
Pages (from-to)187-191
Number of pages5
JournalChemical Physics Letters
Issue number4-6
Publication statusPublished - Jun 30 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry


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