Fabrication and characterization of field-effect transistor device with C2v isomer of Pr@C82

Takayuki Nagano, Eiji Kuwahara, Toshio Takayanagi, Yoshihiro Kubozono, Akihiko Fujiwara

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

A field-effect transistor (FET) device was fabricated with thin films of C2v isomer of Pr@C82. This device apparently showed n-channel normally on type FET properties, where non-zero current was observed at the gate-source voltage, VGS, of 0 V. Normally off FET properties were observed by subtraction of the non-zero current from the drain current. Thus the normally on properties are ascribed to the high bulk current caused by the small energy gap of ≈0.3 eV. The field-effect mobility for this FET was 1.5 × 10-4 cm2 V-1 s-1 at 320 K, being comparable to those of other endohedral metallofullerene FET devices.

Original languageEnglish
Pages (from-to)187-191
Number of pages5
JournalChemical Physics Letters
Volume409
Issue number4-6
DOIs
Publication statusPublished - Jun 30 2005

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Field effect transistors
Isomers
field effect transistors
isomers
Fabrication
fabrication
Drain current
subtraction
Energy gap
Thin films
Electric potential
electric potential
thin films

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces
  • Condensed Matter Physics

Cite this

Fabrication and characterization of field-effect transistor device with C2v isomer of Pr@C82. / Nagano, Takayuki; Kuwahara, Eiji; Takayanagi, Toshio; Kubozono, Yoshihiro; Fujiwara, Akihiko.

In: Chemical Physics Letters, Vol. 409, No. 4-6, 30.06.2005, p. 187-191.

Research output: Contribution to journalArticle

Nagano, Takayuki ; Kuwahara, Eiji ; Takayanagi, Toshio ; Kubozono, Yoshihiro ; Fujiwara, Akihiko. / Fabrication and characterization of field-effect transistor device with C2v isomer of Pr@C82. In: Chemical Physics Letters. 2005 ; Vol. 409, No. 4-6. pp. 187-191.
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