Fabrication and characteristics of C84 fullerene field-effect transistors

Kana Shibata, Yoshihiro Kubozono, Takayoshi Kanbara, Tomoko Hosokawa, Akihiko Fujiwara, Yasuhiro Ito, Hisanori Shinohara

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Abstract

The fabrication of higher-fullerene field effect transistors (FET) devices with thin films of C84 was studied. Commercially available SiO 2/Si(100) wafers were used as substrates after cleaning with acetone, methanol and H2SO4/H2O2. The thin film of C84 was formed by a thermal deposition under a vacuum of 10-8 Torr. The channel length and the channel width of the device were 75 and 4000 μm. The results show that the threshold voltage decreases monotonically with increasing temperature up to 320 K.

Original languageEnglish
Pages (from-to)2572-2574
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number14
DOIs
Publication statusPublished - Apr 5 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Shibata, K., Kubozono, Y., Kanbara, T., Hosokawa, T., Fujiwara, A., Ito, Y., & Shinohara, H. (2004). Fabrication and characteristics of C84 fullerene field-effect transistors. Applied Physics Letters, 84(14), 2572-2574. https://doi.org/10.1063/1.1695193