Experimental Validation of Normally-On GaN HEMT and Its Gate Drive Circuit

Takaharu Ishibashi, Masayuki Okamoto, Eiji Hiraki, Toshihiko Tanaka, Tamotsu Hashizume, Daigo Kikuta, Tetsu Kachi

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

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Engineering & Materials Science