Experimental validation of newly fabricated normally-on GaN high-electron-mobility transistor

Takaharu Ishibashi, Masayuki Okamoto, Eiji Hiraki, Toshihiko Tanaka, Tamotsu Hashizume, Daigo Kikuta, Tetsu Kachi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

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Engineering & Materials Science