Experimental validation of newly fabricated normally-on GaN high-electron-mobility transistor

Takaharu Ishibashi, Masayuki Okamoto, Eiji Hiraki, Toshihiko Tanaka, Tamotsu Hashizume, Daigo Kikuta, Tetsu Kachi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are the promising materials for next-generation power devices. A normally-on GaN-based high-electron-mobility transistor (GaN HEMT) has been fabricated for power electronic converters. In this study, the current collapse phenomena, which are distinctive characteristics of GaN devices, are evaluated in detail under several voltages with two switching frequencies. Prototype circuits for a boost-type dc-dc converter and a single-phase full-bridge inverter, which use the newly fabricated GaN HEMT, are constructed and tested. The experimental results demonstrate that the newly fabricated normally-on GaN HEMT with the previously proposed gate drive circuit is suitable for use as a next-generation power device.

Original languageEnglish
Title of host publication2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013
Pages1584-1591
Number of pages8
DOIs
Publication statusPublished - Dec 31 2013
Externally publishedYes
Event5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013 - Denver, CO, United States
Duration: Sep 15 2013Sep 19 2013

Publication series

Name2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013

Other

Other5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013
CountryUnited States
CityDenver, CO
Period9/15/139/19/13

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Fuel Technology

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