Experimental validation of newly fabricated normally-on GaN high-electron-mobility transistor

Takaharu Ishibashi; Masayuki Okamoto; Eiji Hiraki; Toshihiko Tanaka; Tamotsu Hashizume; Daigo Kikuta; Tetsu Kachi

doi:10.1109/ECCE.2013.6646894

Experimental validation of newly fabricated normally-on GaN high-electron-mobility transistor

Takaharu Ishibashi, Masayuki Okamoto, Eiji Hiraki, Toshihiko Tanaka, Tamotsu Hashizume, Daigo Kikuta, Tetsu Kachi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are the promising materials for next-generation power devices. A normally-on GaN-based high-electron-mobility transistor (GaN HEMT) has been fabricated for power electronic converters. In this study, the current collapse phenomena, which are distinctive characteristics of GaN devices, are evaluated in detail under several voltages with two switching frequencies. Prototype circuits for a boost-type dc-dc converter and a single-phase full-bridge inverter, which use the newly fabricated GaN HEMT, are constructed and tested. The experimental results demonstrate that the newly fabricated normally-on GaN HEMT with the previously proposed gate drive circuit is suitable for use as a next-generation power device.

Original language	English
Title of host publication	2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013
Pages	1584-1591
Number of pages	8
DOIs	https://doi.org/10.1109/ECCE.2013.6646894
Publication status	Published - Dec 31 2013
Externally published	Yes
Event	5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013 - Denver, CO, United States Duration: Sept 15 2013 → Sept 19 2013

Publication series

Name	2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013

Other

Other	5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013
Country/Territory	United States
City	Denver, CO
Period	9/15/13 → 9/19/13

ASJC Scopus subject areas

Energy Engineering and Power Technology
Fuel Technology

Access to Document

10.1109/ECCE.2013.6646894

Cite this

Ishibashi, T., Okamoto, M., Hiraki, E., Tanaka, T., Hashizume, T., Kikuta, D., & Kachi, T. (2013). Experimental validation of newly fabricated normally-on GaN high-electron-mobility transistor. In 2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013 (pp. 1584-1591). [6646894] (2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013). https://doi.org/10.1109/ECCE.2013.6646894

Experimental validation of newly fabricated normally-on GaN high-electron-mobility transistor. / Ishibashi, Takaharu; Okamoto, Masayuki; Hiraki, Eiji et al.

2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013. 2013. p. 1584-1591 6646894 (2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ishibashi, T, Okamoto, M, Hiraki, E, Tanaka, T, Hashizume, T, Kikuta, D & Kachi, T 2013, Experimental validation of newly fabricated normally-on GaN high-electron-mobility transistor. in 2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013., 6646894, 2013 IEEE Energy Conversion Congress and Exposition, ECCE 2013, pp. 1584-1591, 5th Annual IEEE Energy Conversion Congress and Exhibition, ECCE 2013, Denver, CO, United States, 9/15/13. https://doi.org/10.1109/ECCE.2013.6646894

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abstract = "Wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are the promising materials for next-generation power devices. A normally-on GaN-based high-electron-mobility transistor (GaN HEMT) has been fabricated for power electronic converters. In this study, the current collapse phenomena, which are distinctive characteristics of GaN devices, are evaluated in detail under several voltages with two switching frequencies. Prototype circuits for a boost-type dc-dc converter and a single-phase full-bridge inverter, which use the newly fabricated GaN HEMT, are constructed and tested. The experimental results demonstrate that the newly fabricated normally-on GaN HEMT with the previously proposed gate drive circuit is suitable for use as a next-generation power device.",

author = "Takaharu Ishibashi and Masayuki Okamoto and Eiji Hiraki and Toshihiko Tanaka and Tamotsu Hashizume and Daigo Kikuta and Tetsu Kachi",

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AU - Kikuta, Daigo

AU - Kachi, Tetsu

PY - 2013/12/31

Y1 - 2013/12/31

N2 - Wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are the promising materials for next-generation power devices. A normally-on GaN-based high-electron-mobility transistor (GaN HEMT) has been fabricated for power electronic converters. In this study, the current collapse phenomena, which are distinctive characteristics of GaN devices, are evaluated in detail under several voltages with two switching frequencies. Prototype circuits for a boost-type dc-dc converter and a single-phase full-bridge inverter, which use the newly fabricated GaN HEMT, are constructed and tested. The experimental results demonstrate that the newly fabricated normally-on GaN HEMT with the previously proposed gate drive circuit is suitable for use as a next-generation power device.

AB - Wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are the promising materials for next-generation power devices. A normally-on GaN-based high-electron-mobility transistor (GaN HEMT) has been fabricated for power electronic converters. In this study, the current collapse phenomena, which are distinctive characteristics of GaN devices, are evaluated in detail under several voltages with two switching frequencies. Prototype circuits for a boost-type dc-dc converter and a single-phase full-bridge inverter, which use the newly fabricated GaN HEMT, are constructed and tested. The experimental results demonstrate that the newly fabricated normally-on GaN HEMT with the previously proposed gate drive circuit is suitable for use as a next-generation power device.

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Experimental validation of newly fabricated normally-on GaN high-electron-mobility transistor

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