Expansion of Shockley stacking fault observed by scanning electron microscope and partial dislocation motion in 4H-SiC

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We studied the dynamics of the expansion of a Shockley-type stacking fault (SSF) with 30° Si(g) partial dislocations (PDs) using a scanning electron microscope. We observed SSFs as dark lines (DLs), which formed the contrast at the intersection between the surface and the SSF on the (0001) face inclined by 8° from the surface. We performed experiments at different electron-beam scanning speeds, observing magnifications, and irradiation areas. The results indicated that the elongation of a DL during one-frame scanning depended on the time for which the electron beam irradiated the PD segment in the frame of view. From these results, we derived a formula to express the velocity of the PD using the elongation rate of the corresponding DL during one-frame scanning. We also obtained the result that the elongation velocity of the DL was not influenced by changing the direction in which the electron beam irradiates the PD. From this result, we deduced that the geometrical kink motion of the PD was enhanced by diffusing carriers that were generated by the electron-beam irradiation.

Original languageEnglish
Article number161580
JournalJournal of Applied Physics
Volume123
Issue number16
DOIs
Publication statusPublished - Apr 28 2018

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Expansion of Shockley stacking fault observed by scanning electron microscope and partial dislocation motion in 4H-SiC'. Together they form a unique fingerprint.

  • Cite this