Abstract
CoFe2O4/α-Fe2O3 (ferrimagnetic/antiferromagnetic) bilayered films were prepared on α-Al2O3(102) single-crystalline substrates by helicon plasma sputtering. A well-crystallized epitaxial α-Fe2O3(102) layer was formed on the substrate, while CoFe2O4 grown on α-Fe2O3 (102) was a polycrystalline layer with a (100)-preferred orientation. The α-Fe2O3(102) films without CoFe2O4 layers clearly showed a spin-flip transition at about 400 K. The spins aligned perpendicular to the film plane at room temperature changed their direction within the film plane above 400 K. However the α-Fe2O3 base layers of CoFe2O4/α-Fe2O3 bilayered films did not show any spin-flip transition. The CoFe2O4 layer on α-Fe2O3 had a large in-plane magnetic anisotropy, while the spin axis of the α-Fe2O3 (102) base layer was directed perpendicular to the film plane. The magnetization of ferrimagnetic CoFe2O4 layers was coupled perpendicularly to the spin axis of antiferromagnetic α-Fe2O3 layers due to the exchange coupling at the interface between CoFe2O4 and α-Fe2O3.
Original language | English |
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Pages (from-to) | T1.10.1-T1.10.6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 674 |
DOIs | |
Publication status | Published - Jan 1 2001 |
Event | Applications of Ferromagnetic and Optical Materials, Storage and Magnotoelectronics - San Francisco, CA, United States Duration: Apr 16 2001 → Apr 20 2001 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering