Evolution of the fermi surface with carrier concentration in Bi2Sr2CaCu2O8+δ

H. Ding, M. R. Norman, Takayoshi Yokoya, T. Takeuchi, M. Randeria, J. C. Campuzano, T. Takahashi, T. Mochiku, K. Kadowaki

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Abstract

We show, by use of angle-resolved photoemission spectroscopy, that underdoped Bi2Sr2CaCu2O8+δ appears to have a large Fermi surface centered at (π, π), even for samples with a Tc as low as 15 K. No clear evidence of a Fermi surface pocket around (π/2, π/2) has been found. These conclusions are based on a determination of the minimum gap locus in the pseudogap regime Tc <T <T*, which is found to coincide with the locus of gapless excitations in momentum space (Fermi surface) determined above T*. These results suggest that the pseudogap is more likely of precursor pairing rather than magnetic origin.

Original languageEnglish
Pages (from-to)2628-2631
Number of pages4
JournalPhysical Review Letters
Volume78
Issue number13
Publication statusPublished - 1997
Externally publishedYes

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Fermi surfaces
loci
photoelectric emission
momentum
spectroscopy
excitation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Ding, H., Norman, M. R., Yokoya, T., Takeuchi, T., Randeria, M., Campuzano, J. C., ... Kadowaki, K. (1997). Evolution of the fermi surface with carrier concentration in Bi2Sr2CaCu2O8+δ. Physical Review Letters, 78(13), 2628-2631.

Evolution of the fermi surface with carrier concentration in Bi2Sr2CaCu2O8+δ. / Ding, H.; Norman, M. R.; Yokoya, Takayoshi; Takeuchi, T.; Randeria, M.; Campuzano, J. C.; Takahashi, T.; Mochiku, T.; Kadowaki, K.

In: Physical Review Letters, Vol. 78, No. 13, 1997, p. 2628-2631.

Research output: Contribution to journalArticle

Ding, H, Norman, MR, Yokoya, T, Takeuchi, T, Randeria, M, Campuzano, JC, Takahashi, T, Mochiku, T & Kadowaki, K 1997, 'Evolution of the fermi surface with carrier concentration in Bi2Sr2CaCu2O8+δ', Physical Review Letters, vol. 78, no. 13, pp. 2628-2631.
Ding H, Norman MR, Yokoya T, Takeuchi T, Randeria M, Campuzano JC et al. Evolution of the fermi surface with carrier concentration in Bi2Sr2CaCu2O8+δ. Physical Review Letters. 1997;78(13):2628-2631.
Ding, H. ; Norman, M. R. ; Yokoya, Takayoshi ; Takeuchi, T. ; Randeria, M. ; Campuzano, J. C. ; Takahashi, T. ; Mochiku, T. ; Kadowaki, K. / Evolution of the fermi surface with carrier concentration in Bi2Sr2CaCu2O8+δ. In: Physical Review Letters. 1997 ; Vol. 78, No. 13. pp. 2628-2631.
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AU - Randeria, M.

AU - Campuzano, J. C.

AU - Takahashi, T.

AU - Mochiku, T.

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