Evaluation of OKI SOI technology

Y. Ikegami, Y. Arai, K. Hara, M. Hazumi, H. Ikeda, H. Ishino, T. Kohriki, H. Miyake, A. Mochizuki, S. Terada, T. Tsuboyama, Y. Unno

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The silicon-on-insulator (SOI) CMOS technology has a number of advantages over the standard bulk CMOS technology, such as no latch-up effect, high speed and low power. The fully depleted SOI (FD-SOI) technology provided by OKI Electric Industry Co., Ltd. is realizing the full features of the advantages with lowest junction capacitance. Test element group (TEG) structures of transistors were fabricated and irradiated with protons. The first results are presented.

Original languageEnglish
Pages (from-to)706-711
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume579
Issue number2 SPEC. ISS.
DOIs
Publication statusPublished - Sep 1 2007
Externally publishedYes

Keywords

  • CMOS
  • FET
  • Radiation damage
  • SOI

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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    Ikegami, Y., Arai, Y., Hara, K., Hazumi, M., Ikeda, H., Ishino, H., Kohriki, T., Miyake, H., Mochizuki, A., Terada, S., Tsuboyama, T., & Unno, Y. (2007). Evaluation of OKI SOI technology. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 579(2 SPEC. ISS.), 706-711. https://doi.org/10.1016/j.nima.2007.05.272