Erratum: 2.4 μm cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer (Electronics Letters (2007) 43:23 (1306-1308) DOI:10.1049/el:20079759)

H. Fukano, T. Sato, M. Mitsuhara, Y. Kondo, H. Yasaka

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