Erratum: 2.4 μm cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer (Electronics Letters (2007) 43:23 (1306-1308) DOI:10.1049/el:20079759)

H. Fukano; T. Sato; M. Mitsuhara; Y. Kondo; H. Yasaka

doi:10.1049/el:20073357

Erratum: 2.4 μm cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer (Electronics Letters (2007) 43:23 (1306-1308) DOI:10.1049/el:20079759)

H. Fukano, T. Sato, M. Mitsuhara, Y. Kondo, H. Yasaka

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Number of pages	1
Journal	Electronics Letters
Volume	43
Issue number	25
DOIs	https://doi.org/10.1049/el:20073357
Publication status	Published - Dec 17 2007
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20073357

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@article{30b58c2ffc3140a5987480e48e60d5d7,

title = "Erratum: 2.4 μm cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer (Electronics Letters (2007) 43:23 (1306-1308) DOI:10.1049/el:20079759)",

author = "H. Fukano and T. Sato and M. Mitsuhara and Y. Kondo and H. Yasaka",

year = "2007",

month = dec,

day = "17",

doi = "10.1049/el:20073357",

language = "English",

volume = "43",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "25",

}

TY - JOUR

T1 - Erratum

T2 - 2.4 μm cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer (Electronics Letters (2007) 43:23 (1306-1308) DOI:10.1049/el:20079759)

AU - Fukano, H.

AU - Sato, T.

AU - Mitsuhara, M.

AU - Kondo, Y.

AU - Yasaka, H.

PY - 2007/12/17

Y1 - 2007/12/17

UR - http://www.scopus.com/inward/record.url?scp=36949025931&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36949025931&partnerID=8YFLogxK

U2 - 10.1049/el:20073357

DO - 10.1049/el:20073357

M3 - Comment/debate

AN - SCOPUS:36949025931

SN - 0013-5194

VL - 43

JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -

Erratum: 2.4 μm cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer (Electronics Letters (2007) 43:23 (1306-1308) DOI:10.1049/el:20079759)

ASJC Scopus subject areas

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