Erratum

2.4 μm cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer (Electronics Letters (2007) 43:23 (1306-1308) DOI:10.1049/el:20079759)

Hideki Fukano, T. Sato, M. Mitsuhara, Y. Kondo, H. Yasaka

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1476
Number of pages1
JournalElectronics Letters
Volume43
Issue number25
DOIs
Publication statusPublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

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title = "Erratum: 2.4 μm cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer (Electronics Letters (2007) 43:23 (1306-1308) DOI:10.1049/el:20079759)",
author = "Hideki Fukano and T. Sato and M. Mitsuhara and Y. Kondo and H. Yasaka",
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AU - Fukano, Hideki

AU - Sato, T.

AU - Mitsuhara, M.

AU - Kondo, Y.

AU - Yasaka, H.

PY - 2007

Y1 - 2007

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U2 - 10.1049/el:20073357

DO - 10.1049/el:20073357

M3 - Article

VL - 43

SP - 1476

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 25

ER -