Abstract
We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54 μm in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5 × 1016 cm-3. On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er.
Original language | English |
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Pages (from-to) | 818-822 |
Number of pages | 5 |
Journal | Physica B: Condensed Matter |
Volume | 340-342 |
DOIs | |
Publication status | Published - Dec 31 2003 |
Event | Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: Jul 28 2003 → Aug 1 2003 |
Keywords
- Erbium
- Photoluminescence
- Silicon
- Tensile strain
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering