Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer

T. Ishiyama; M. Yoshida; Y. Yamashita; Y. Kamiura; T. Date; T. Hasegawa; K. Inoue; K. Okuno

doi:10.1016/j.physb.2003.09.225

Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer

T. Ishiyama, M. Yoshida, Y. Yamashita, Y. Kamiura, T. Date, T. Hasegawa, K. Inoue, K. Okuno

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54 μm in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5 × 10¹⁶ cm^-3. On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er.

Original language	English
Pages (from-to)	818-822
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	340-342
DOIs	https://doi.org/10.1016/j.physb.2003.09.225
Publication status	Published - Dec 31 2003
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: Jul 28 2003 → Aug 1 2003

Keywords

Erbium
Photoluminescence
Silicon
Tensile strain

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer",

abstract = "We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54 μm in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5 × 1016 cm-3. On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er.",

keywords = "Erbium, Photoluminescence, Silicon, Tensile strain",

author = "T. Ishiyama and M. Yoshida and Y. Yamashita and Y. Kamiura and T. Date and T. Hasegawa and K. Inoue and K. Okuno",

year = "2003",

month = dec,

day = "31",

doi = "10.1016/j.physb.2003.09.225",

language = "English",

volume = "340-342",

pages = "818--822",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

note = "Proceedings of the 22nd International Conference on Defects in (ICDS-22) ; Conference date: 28-07-2003 Through 01-08-2003",

}

TY - JOUR

T1 - Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer

AU - Ishiyama, T.

AU - Yoshida, M.

AU - Yamashita, Y.

AU - Kamiura, Y.

AU - Date, T.

AU - Hasegawa, T.

AU - Inoue, K.

AU - Okuno, K.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54 μm in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5 × 1016 cm-3. On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er.

AB - We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54 μm in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5 × 1016 cm-3. On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er.

KW - Erbium

KW - Photoluminescence

KW - Silicon

KW - Tensile strain

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U2 - 10.1016/j.physb.2003.09.225

DO - 10.1016/j.physb.2003.09.225

M3 - Conference article

AN - SCOPUS:0347316528

VL - 340-342

SP - 818

EP - 822

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

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