Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer

T. Ishiyama, M. Yoshida, Yoshifumi Yamashita, Y. Kamiura, T. Date, T. Hasegawa, K. Inoue, K. Okuno

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54 μm in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5 × 1016 cm-3. On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er.

Original languageEnglish
Pages (from-to)818-822
Number of pages5
JournalPhysica B: Condensed Matter
Volume340-342
DOIs
Publication statusPublished - Dec 31 2003

Fingerprint

Tensile strain
Photoluminescence
photoluminescence
Luminescence
Molecular beam epitaxy
luminescence
Chemical activation
low concentrations
molecular beam epitaxy
activation

Keywords

  • Erbium
  • Photoluminescence
  • Silicon
  • Tensile strain

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer. / Ishiyama, T.; Yoshida, M.; Yamashita, Yoshifumi; Kamiura, Y.; Date, T.; Hasegawa, T.; Inoue, K.; Okuno, K.

In: Physica B: Condensed Matter, Vol. 340-342, 31.12.2003, p. 818-822.

Research output: Contribution to journalArticle

Ishiyama, T, Yoshida, M, Yamashita, Y, Kamiura, Y, Date, T, Hasegawa, T, Inoue, K & Okuno, K 2003, 'Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer', Physica B: Condensed Matter, vol. 340-342, pp. 818-822. https://doi.org/10.1016/j.physb.2003.09.225
Ishiyama, T. ; Yoshida, M. ; Yamashita, Yoshifumi ; Kamiura, Y. ; Date, T. ; Hasegawa, T. ; Inoue, K. ; Okuno, K. / Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer. In: Physica B: Condensed Matter. 2003 ; Vol. 340-342. pp. 818-822.
@article{01cba94a0a164e57a7fd17243c3cfff2,
title = "Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer",
abstract = "We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54 μm in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5 × 1016 cm-3. On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er.",
keywords = "Erbium, Photoluminescence, Silicon, Tensile strain",
author = "T. Ishiyama and M. Yoshida and Yoshifumi Yamashita and Y. Kamiura and T. Date and T. Hasegawa and K. Inoue and K. Okuno",
year = "2003",
month = "12",
day = "31",
doi = "10.1016/j.physb.2003.09.225",
language = "English",
volume = "340-342",
pages = "818--822",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",

}

TY - JOUR

T1 - Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer

AU - Ishiyama, T.

AU - Yoshida, M.

AU - Yamashita, Yoshifumi

AU - Kamiura, Y.

AU - Date, T.

AU - Hasegawa, T.

AU - Inoue, K.

AU - Okuno, K.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54 μm in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5 × 1016 cm-3. On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er.

AB - We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54 μm in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5 × 1016 cm-3. On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er.

KW - Erbium

KW - Photoluminescence

KW - Silicon

KW - Tensile strain

UR - http://www.scopus.com/inward/record.url?scp=0347316528&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347316528&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2003.09.225

DO - 10.1016/j.physb.2003.09.225

M3 - Article

AN - SCOPUS:0347316528

VL - 340-342

SP - 818

EP - 822

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

ER -