Abstract
We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54 μm in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5 × 1016 cm-3. On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er.
| Original language | English |
|---|---|
| Pages (from-to) | 818-822 |
| Number of pages | 5 |
| Journal | Physica B: Condensed Matter |
| Volume | 340-342 |
| DOIs | |
| Publication status | Published - Dec 31 2003 |
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Keywords
- Erbium
- Photoluminescence
- Silicon
- Tensile strain
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
Cite this
Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer. / Ishiyama, T.; Yoshida, M.; Yamashita, Yoshifumi; Kamiura, Y.; Date, T.; Hasegawa, T.; Inoue, K.; Okuno, K.
In: Physica B: Condensed Matter, Vol. 340-342, 31.12.2003, p. 818-822.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer
AU - Ishiyama, T.
AU - Yoshida, M.
AU - Yamashita, Yoshifumi
AU - Kamiura, Y.
AU - Date, T.
AU - Hasegawa, T.
AU - Inoue, K.
AU - Okuno, K.
PY - 2003/12/31
Y1 - 2003/12/31
N2 - We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54 μm in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5 × 1016 cm-3. On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er.
AB - We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54 μm in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5 × 1016 cm-3. On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er.
KW - Erbium
KW - Photoluminescence
KW - Silicon
KW - Tensile strain
UR - http://www.scopus.com/inward/record.url?scp=0347316528&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0347316528&partnerID=8YFLogxK
U2 - 10.1016/j.physb.2003.09.225
DO - 10.1016/j.physb.2003.09.225
M3 - Article
AN - SCOPUS:0347316528
VL - 340-342
SP - 818
EP - 822
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
ER -