Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer

T. Ishiyama, M. Yoshida, Y. Yamashita, Y. Kamiura, T. Date, T. Hasegawa, K. Inoue, K. Okuno

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54 μm in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5 × 1016 cm-3. On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er.

Original languageEnglish
Pages (from-to)818-822
Number of pages5
JournalPhysica B: Condensed Matter
Publication statusPublished - Dec 31 2003
EventProceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark
Duration: Jul 28 2003Aug 1 2003


  • Erbium
  • Photoluminescence
  • Silicon
  • Tensile strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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