Enhancement of electron correlation in Co thin clusters grown on S/GaAs (001)

Ayumi Harasawa, Taichi Okuda, Takanori Wakita, Takahide Tohyama, Toyoaki Eguchi, Kan Nakatsuji, Nobuo Ueno, Krishna G. Nath, Toyohiko Kinoshita

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


An enhancement of the electron correlation effect by electron confinement is revealed in Co clusters formed on a sulfur passivated GaAs(001) surface. A satellite peak due to the strong electron correlation is observed at a binding energy of 5 eV in the valence band spectrum of Co photoemission spectroscopy. The photon energy dependences of the intensity and the spin polarization of the satellite are essentially the same to those of the well-known Ni 6 eV satellite. This suggests that the satellite is caused by the relatively strong 3d-3d electron correlation effect of the Co cluster and less hybridization effect at the interface.

Original languageEnglish
Article number205416
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number20
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Enhancement of electron correlation in Co thin clusters grown on S/GaAs (001)'. Together they form a unique fingerprint.

Cite this