Enhancement of blue emission from GaN films and diodes by water vapor remote plasma treatment

Y. Kamiura, M. Ogasawara, K. Fukutani, T. Ishiyama, Yoshifumi Yamashita, T. Mitani, T. Mukai

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have studied the effects of water vapor remote plasma treatment (H2O RPT) on emission from Si-doped and undoped n-type GaN films grown on c-face sapphire substrates by the atmospheric-pressure metalorganic chemical vapor deposition method. We found by photoluminescence (PL) spectroscopy at 77 K that H2O RPT enhanced violet emission from the n-type GaN films, similarly to the previously observed enhancing effect on blue emission from Mg-doped p-type GaN films. We also observed that H2O RPT reduced the intensity of ESR signal comprising of two peaks detected at 4.2 K in undoped n-type films and increased their resistivity measured at room temperature. We ascribe the enhancing effect of H2O RPT to the passivation of non-radiative recombination centers by hydrogen produced by H2O RPT. We formed GaN p-n diodes from the layer structure of p-GaN:Mg/n-GaN:Si/sapphire, and carried out electroluminescence (EL) measurements of the diodes at 77 K. We observed that EL intensity was also enhanced by H2O RPT.

Original languageEnglish
Pages (from-to)331-334
Number of pages4
JournalPhysica B: Condensed Matter
Volume401-402
DOIs
Publication statusPublished - Dec 15 2007

Fingerprint

Steam
Water vapor
water vapor
Diodes
diodes
Plasmas
Aluminum Oxide
augmentation
Electroluminescence
Sapphire
electroluminescence
sapphire
Photoluminescence spectroscopy
Metallorganic chemical vapor deposition
Passivation
passivity
Atmospheric pressure
metalorganic chemical vapor deposition
Paramagnetic resonance
Hydrogen

Keywords

  • Blue emission
  • Hydrogen
  • III-nitrides
  • Plasma treatment

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Enhancement of blue emission from GaN films and diodes by water vapor remote plasma treatment. / Kamiura, Y.; Ogasawara, M.; Fukutani, K.; Ishiyama, T.; Yamashita, Yoshifumi; Mitani, T.; Mukai, T.

In: Physica B: Condensed Matter, Vol. 401-402, 15.12.2007, p. 331-334.

Research output: Contribution to journalArticle

Kamiura, Y. ; Ogasawara, M. ; Fukutani, K. ; Ishiyama, T. ; Yamashita, Yoshifumi ; Mitani, T. ; Mukai, T. / Enhancement of blue emission from GaN films and diodes by water vapor remote plasma treatment. In: Physica B: Condensed Matter. 2007 ; Vol. 401-402. pp. 331-334.
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AU - Kamiura, Y.

AU - Ogasawara, M.

AU - Fukutani, K.

AU - Ishiyama, T.

AU - Yamashita, Yoshifumi

AU - Mitani, T.

AU - Mukai, T.

PY - 2007/12/15

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N2 - We have studied the effects of water vapor remote plasma treatment (H2O RPT) on emission from Si-doped and undoped n-type GaN films grown on c-face sapphire substrates by the atmospheric-pressure metalorganic chemical vapor deposition method. We found by photoluminescence (PL) spectroscopy at 77 K that H2O RPT enhanced violet emission from the n-type GaN films, similarly to the previously observed enhancing effect on blue emission from Mg-doped p-type GaN films. We also observed that H2O RPT reduced the intensity of ESR signal comprising of two peaks detected at 4.2 K in undoped n-type films and increased their resistivity measured at room temperature. We ascribe the enhancing effect of H2O RPT to the passivation of non-radiative recombination centers by hydrogen produced by H2O RPT. We formed GaN p-n diodes from the layer structure of p-GaN:Mg/n-GaN:Si/sapphire, and carried out electroluminescence (EL) measurements of the diodes at 77 K. We observed that EL intensity was also enhanced by H2O RPT.

AB - We have studied the effects of water vapor remote plasma treatment (H2O RPT) on emission from Si-doped and undoped n-type GaN films grown on c-face sapphire substrates by the atmospheric-pressure metalorganic chemical vapor deposition method. We found by photoluminescence (PL) spectroscopy at 77 K that H2O RPT enhanced violet emission from the n-type GaN films, similarly to the previously observed enhancing effect on blue emission from Mg-doped p-type GaN films. We also observed that H2O RPT reduced the intensity of ESR signal comprising of two peaks detected at 4.2 K in undoped n-type films and increased their resistivity measured at room temperature. We ascribe the enhancing effect of H2O RPT to the passivation of non-radiative recombination centers by hydrogen produced by H2O RPT. We formed GaN p-n diodes from the layer structure of p-GaN:Mg/n-GaN:Si/sapphire, and carried out electroluminescence (EL) measurements of the diodes at 77 K. We observed that EL intensity was also enhanced by H2O RPT.

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