Enhanced thermoelectricity by controlled local structure in bismuth-chalcogenides

Kensei Terashima, Y. Yano, E. Paris, Y. Goto, Y. Mizuguchi, Y. Kamihara, Takanori Wakita, Yuji Muraoka, N. L. Saini, Takayoshi Yokoya

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Abstract

Spectroscopic techniques, including photoelectron spectroscopy, diffuse reflectance, and x-ray absorption, are used to investigate the electronic structure and the local structure of LaOBiS 2 - xSe x thermoelectric material. It is found that Se substitution effectively suppresses local distortion that can be responsible for the increased carrier mobility together with a change in the electronic structure. The results suggest a possible way to control thermoelectric properties by tuning of the local crystal structure of these materials.

Original languageEnglish
Article number145105
JournalJournal of Applied Physics
Volume125
Issue number14
DOIs
Publication statusPublished - Apr 14 2019

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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