Electrostatic electron-doping yields superconductivity in LaOBiS2

Eri Uesugi, Saki Nishiyama, Hidenori Goto, Hiromi Ota, Yoshihiro Kubozono

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Electrostatic carrier-doping is attracting serious attention as a meaningful technique for producing interesting electronic states in two-dimensional (2D) layered materials. Ionic-liquid gating can provide the critical carrier density required to induce the metal-insulator transition and superconductivity. However, the physical properties of only a few materials have been controlled by the electrostatic carrier-doping during the past decade. Here, we report an observation of superconductivity in a 2D layered material, LaOBiS2, achieved by the electrostatic electron-doping. The electron doping of LaOBiS2 induced metallic conductivity in the normally insulating LaOBiS2, ultimately led to superconductivity. The superconducting transition temperature, Tc, was 3.6 K, higher than the 2.7 K seen in LaO1-xFxBiS2 with an electron-doped BiS2 layer. A rapid drop in resistance (R) was observed at low temperature, which disappeared with the application of high magnetic fields, implying a superconducting state. This study reveals that electron-doping is an important technique for inducing superconductivity in 2D layered BiS2 materials.

Original languageEnglish
Article number252601
JournalApplied Physics Letters
Volume109
Issue number25
DOIs
Publication statusPublished - Dec 19 2016

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this