Electronically controlled motion of hydrogen in silicon

Y. Kamiura, K. Fukuda, Yoshifumi Yamashita, T. Ishiyama

Research output: Contribution to journalArticle

Abstract

We report on the quantitative study of charge-state-dependent local motion of hydrogen around carbon in Si, which was directly probed by measuring the recovery of stress-induced alignment of a hydrogen-carbon complex by means of deep-level transient spectroscopy under uniaxial stress. We have found that hydrogen jumps from a bond-centered site between C and Si atoms to another with an activation energy of 1.33 eV and a frequency factor of (formula presented) in the electron-empty charge state while hydrogen jumps much faster in the electron-occupied charge state with a lower activation energy of 0.55 eV and a smaller frequency factor of (formula presented) We have concluded that the hydrogen-carbon complex captures an electron from the conduction band at its gap state with antibonding character, lowering the barrier and frequency factor for hydrogen motion in the electron-occupied charge state.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number11
DOIs
Publication statusPublished - Jan 1 2002

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Silicon
Hydrogen
silicon
hydrogen
Carbon
Electrons
carbon
Activation energy
activation energy
Deep level transient spectroscopy
electrons
Conduction bands
electron capture
conduction bands
recovery
alignment
Recovery
Atoms
spectroscopy
atoms

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Electronically controlled motion of hydrogen in silicon. / Kamiura, Y.; Fukuda, K.; Yamashita, Yoshifumi; Ishiyama, T.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 11, 01.01.2002, p. 1-4.

Research output: Contribution to journalArticle

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