Electronically controlled motion of hydrogen in silicon

Y. Kamiura, K. Fukuda, Y. Yamashita, T. Ishiyama

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report on the quantitative study of charge-state-dependent local motion of hydrogen around carbon in Si, which was directly probed by measuring the recovery of stress-induced alignment of a hydrogen-carbon complex by means of deep-level transient spectroscopy under uniaxial stress. We have found that hydrogen jumps from a bond-centered site between C and Si atoms to another with an activation energy of 1.33 eV and a frequency factor of 7.1 × 1014 s-1 in the electron-empty charge state while hydrogen jumps much faster in the electron-occupied charge state with a lower activation energy of 0.55 eV and a smaller frequency factor of 3.3 × 106 s-1. We have concluded that the hydrogen-carbon complex captures an electron from the conduction band at its gap state with antibonding character, lowering the barrier and frequency factor for hydrogen motion in the electron-occupied charge state.

Original languageEnglish
Article number113205
Pages (from-to)1132051-1132054
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number11
Publication statusPublished - Mar 15 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Electronically controlled motion of hydrogen in silicon'. Together they form a unique fingerprint.

  • Cite this

    Kamiura, Y., Fukuda, K., Yamashita, Y., & Ishiyama, T. (2002). Electronically controlled motion of hydrogen in silicon. Physical Review B - Condensed Matter and Materials Physics, 65(11), 1132051-1132054. [113205].