Abstract
We report on the quantitative study of charge-state-dependent local motion of hydrogen around carbon in Si, which was directly probed by measuring the recovery of stress-induced alignment of a hydrogen-carbon complex by means of deep-level transient spectroscopy under uniaxial stress. We have found that hydrogen jumps from a bond-centered site between C and Si atoms to another with an activation energy of 1.33 eV and a frequency factor of 7.1 × 1014 s-1 in the electron-empty charge state while hydrogen jumps much faster in the electron-occupied charge state with a lower activation energy of 0.55 eV and a smaller frequency factor of 3.3 × 106 s-1. We have concluded that the hydrogen-carbon complex captures an electron from the conduction band at its gap state with antibonding character, lowering the barrier and frequency factor for hydrogen motion in the electron-occupied charge state.
| Original language | English |
|---|---|
| Article number | 113205 |
| Pages (from-to) | 1132051-1132054 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 65 |
| Issue number | 11 |
| Publication status | Published - Mar 15 2002 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Electronically controlled motion of hydrogen in silicon. / Kamiura, Y.; Fukuda, K.; Yamashita, Yoshifumi; Ishiyama, T.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 11, 113205, 15.03.2002, p. 1132051-1132054.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Electronically controlled motion of hydrogen in silicon
AU - Kamiura, Y.
AU - Fukuda, K.
AU - Yamashita, Yoshifumi
AU - Ishiyama, T.
PY - 2002/3/15
Y1 - 2002/3/15
N2 - We report on the quantitative study of charge-state-dependent local motion of hydrogen around carbon in Si, which was directly probed by measuring the recovery of stress-induced alignment of a hydrogen-carbon complex by means of deep-level transient spectroscopy under uniaxial stress. We have found that hydrogen jumps from a bond-centered site between C and Si atoms to another with an activation energy of 1.33 eV and a frequency factor of 7.1 × 1014 s-1 in the electron-empty charge state while hydrogen jumps much faster in the electron-occupied charge state with a lower activation energy of 0.55 eV and a smaller frequency factor of 3.3 × 106 s-1. We have concluded that the hydrogen-carbon complex captures an electron from the conduction band at its gap state with antibonding character, lowering the barrier and frequency factor for hydrogen motion in the electron-occupied charge state.
AB - We report on the quantitative study of charge-state-dependent local motion of hydrogen around carbon in Si, which was directly probed by measuring the recovery of stress-induced alignment of a hydrogen-carbon complex by means of deep-level transient spectroscopy under uniaxial stress. We have found that hydrogen jumps from a bond-centered site between C and Si atoms to another with an activation energy of 1.33 eV and a frequency factor of 7.1 × 1014 s-1 in the electron-empty charge state while hydrogen jumps much faster in the electron-occupied charge state with a lower activation energy of 0.55 eV and a smaller frequency factor of 3.3 × 106 s-1. We have concluded that the hydrogen-carbon complex captures an electron from the conduction band at its gap state with antibonding character, lowering the barrier and frequency factor for hydrogen motion in the electron-occupied charge state.
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M3 - Article
AN - SCOPUS:0037088197
VL - 65
SP - 1132051
EP - 1132054
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 11
M1 - 113205
ER -