Electronic structures of heavily boron-doped superconducting diamond films

Takayoshi Yokoya, Hiroyuki Okazaki, Tetsuya Nakamura, Tomohiro Matsushita, Takayuki Muro, Eiji Ikenaga, Masaaki Kobata, Keisuke Kobayashi, Akihisa Takeuchi, Akihiro Awaji, Yoshihiko Takano, Masanori Nagao, Tomohiro Takenouchi, Hiroshi Kawarada, Tamio Oguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recent photoemission studies on heavily boron-doped superconducting diamond films, reporting the electronic structure evolution as a function of boron concentrations, are reviewed. From soft X-ray angle-resolved photoemission spectroscopy, which directly measures electronic band dispersions, depopulation of electrons (or formation of hole pockets) at the top of the valence band were clearly observed. This indicates that the holes at the top of the valence bands are responsible for the metallic properties and hence superconductivity at lower temperatures. Hard X-ray photoemission spectroscopy observed shift of the main C 1s core level and intensity evolution of a lower binding energy additional structure, suggesting chemical potential shift, carrier doping efficiency by boron doping, and possibility of boron-related cluster formations.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages39-46
Number of pages8
Volume956
Publication statusPublished - 2007
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/27/0612/1/06

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Superconducting films
Boron
Diamond films
Electronic structure
Photoelectron spectroscopy
Valence bands
Doping (additives)
Core levels
Chemical potential
Photoemission
X ray spectroscopy
Superconductivity
Binding energy
Dispersions
X rays
Electrons
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Yokoya, T., Okazaki, H., Nakamura, T., Matsushita, T., Muro, T., Ikenaga, E., ... Oguchi, T. (2007). Electronic structures of heavily boron-doped superconducting diamond films. In Materials Research Society Symposium Proceedings (Vol. 956, pp. 39-46)

Electronic structures of heavily boron-doped superconducting diamond films. / Yokoya, Takayoshi; Okazaki, Hiroyuki; Nakamura, Tetsuya; Matsushita, Tomohiro; Muro, Takayuki; Ikenaga, Eiji; Kobata, Masaaki; Kobayashi, Keisuke; Takeuchi, Akihisa; Awaji, Akihiro; Takano, Yoshihiko; Nagao, Masanori; Takenouchi, Tomohiro; Kawarada, Hiroshi; Oguchi, Tamio.

Materials Research Society Symposium Proceedings. Vol. 956 2007. p. 39-46.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yokoya, T, Okazaki, H, Nakamura, T, Matsushita, T, Muro, T, Ikenaga, E, Kobata, M, Kobayashi, K, Takeuchi, A, Awaji, A, Takano, Y, Nagao, M, Takenouchi, T, Kawarada, H & Oguchi, T 2007, Electronic structures of heavily boron-doped superconducting diamond films. in Materials Research Society Symposium Proceedings. vol. 956, pp. 39-46, 2006 MRS Fall Meeting, Boston, MA, United States, 11/27/06.
Yokoya T, Okazaki H, Nakamura T, Matsushita T, Muro T, Ikenaga E et al. Electronic structures of heavily boron-doped superconducting diamond films. In Materials Research Society Symposium Proceedings. Vol. 956. 2007. p. 39-46
Yokoya, Takayoshi ; Okazaki, Hiroyuki ; Nakamura, Tetsuya ; Matsushita, Tomohiro ; Muro, Takayuki ; Ikenaga, Eiji ; Kobata, Masaaki ; Kobayashi, Keisuke ; Takeuchi, Akihisa ; Awaji, Akihiro ; Takano, Yoshihiko ; Nagao, Masanori ; Takenouchi, Tomohiro ; Kawarada, Hiroshi ; Oguchi, Tamio. / Electronic structures of heavily boron-doped superconducting diamond films. Materials Research Society Symposium Proceedings. Vol. 956 2007. pp. 39-46
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