Electronic structures of CaAlSi with different stacking AlSi layers by first-principles calculations

Sogo Kuroiwa, Akiyoshi Nakashima, Shin Miyahara, Nobuo Furukawa, Jun Akimitsu

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The full-potential linear augmented plane-wave calculations have been applied to investigate the systematic change of electronic structures in CaAlSi due to different stacking sequences of AlSi layers. The present ab-initio calculations have revealed that the multistacking, buckling and 60° rotation of AlSi layer affect the electronic band structure in this system. In particular, such a structural perturbation gives rise to the disconnected and cylindrical Fermi surface along the M-L lines of the hexagonal Brillouin zone. This means that multistacked CaAlSi with the buckling AlSi layers increases degree of two-dimensional electronic characters, and it gives us qualitative understanding for the quite different upper critical field anisotropy between specimens with and without superstructure as reported previously.

Original languageEnglish
Article number113705
JournalJournal of the Physical Society of Japan
Volume76
Issue number11
DOIs
Publication statusPublished - Nov 2007
Externally publishedYes

Fingerprint

buckling
electronic structure
Brillouin zones
electronics
Fermi surfaces
plane waves
perturbation
anisotropy

Keywords

  • CaAlSi
  • Electronic properties
  • Fermi surface
  • First-principles calculations
  • Superstructure

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electronic structures of CaAlSi with different stacking AlSi layers by first-principles calculations. / Kuroiwa, Sogo; Nakashima, Akiyoshi; Miyahara, Shin; Furukawa, Nobuo; Akimitsu, Jun.

In: Journal of the Physical Society of Japan, Vol. 76, No. 11, 113705, 11.2007.

Research output: Contribution to journalArticle

Kuroiwa, Sogo ; Nakashima, Akiyoshi ; Miyahara, Shin ; Furukawa, Nobuo ; Akimitsu, Jun. / Electronic structures of CaAlSi with different stacking AlSi layers by first-principles calculations. In: Journal of the Physical Society of Japan. 2007 ; Vol. 76, No. 11.
@article{7b4f5bb239224280ac7b83ca37c9ac7b,
title = "Electronic structures of CaAlSi with different stacking AlSi layers by first-principles calculations",
abstract = "The full-potential linear augmented plane-wave calculations have been applied to investigate the systematic change of electronic structures in CaAlSi due to different stacking sequences of AlSi layers. The present ab-initio calculations have revealed that the multistacking, buckling and 60° rotation of AlSi layer affect the electronic band structure in this system. In particular, such a structural perturbation gives rise to the disconnected and cylindrical Fermi surface along the M-L lines of the hexagonal Brillouin zone. This means that multistacked CaAlSi with the buckling AlSi layers increases degree of two-dimensional electronic characters, and it gives us qualitative understanding for the quite different upper critical field anisotropy between specimens with and without superstructure as reported previously.",
keywords = "CaAlSi, Electronic properties, Fermi surface, First-principles calculations, Superstructure",
author = "Sogo Kuroiwa and Akiyoshi Nakashima and Shin Miyahara and Nobuo Furukawa and Jun Akimitsu",
year = "2007",
month = "11",
doi = "10.1143/JPSJ.76.113705",
language = "English",
volume = "76",
journal = "Journal of the Physical Society of Japan",
issn = "0031-9015",
publisher = "Physical Society of Japan",
number = "11",

}

TY - JOUR

T1 - Electronic structures of CaAlSi with different stacking AlSi layers by first-principles calculations

AU - Kuroiwa, Sogo

AU - Nakashima, Akiyoshi

AU - Miyahara, Shin

AU - Furukawa, Nobuo

AU - Akimitsu, Jun

PY - 2007/11

Y1 - 2007/11

N2 - The full-potential linear augmented plane-wave calculations have been applied to investigate the systematic change of electronic structures in CaAlSi due to different stacking sequences of AlSi layers. The present ab-initio calculations have revealed that the multistacking, buckling and 60° rotation of AlSi layer affect the electronic band structure in this system. In particular, such a structural perturbation gives rise to the disconnected and cylindrical Fermi surface along the M-L lines of the hexagonal Brillouin zone. This means that multistacked CaAlSi with the buckling AlSi layers increases degree of two-dimensional electronic characters, and it gives us qualitative understanding for the quite different upper critical field anisotropy between specimens with and without superstructure as reported previously.

AB - The full-potential linear augmented plane-wave calculations have been applied to investigate the systematic change of electronic structures in CaAlSi due to different stacking sequences of AlSi layers. The present ab-initio calculations have revealed that the multistacking, buckling and 60° rotation of AlSi layer affect the electronic band structure in this system. In particular, such a structural perturbation gives rise to the disconnected and cylindrical Fermi surface along the M-L lines of the hexagonal Brillouin zone. This means that multistacked CaAlSi with the buckling AlSi layers increases degree of two-dimensional electronic characters, and it gives us qualitative understanding for the quite different upper critical field anisotropy between specimens with and without superstructure as reported previously.

KW - CaAlSi

KW - Electronic properties

KW - Fermi surface

KW - First-principles calculations

KW - Superstructure

UR - http://www.scopus.com/inward/record.url?scp=36148989581&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36148989581&partnerID=8YFLogxK

U2 - 10.1143/JPSJ.76.113705

DO - 10.1143/JPSJ.76.113705

M3 - Article

AN - SCOPUS:36148989581

VL - 76

JO - Journal of the Physical Society of Japan

JF - Journal of the Physical Society of Japan

SN - 0031-9015

IS - 11

M1 - 113705

ER -