Electronic structure of YbGa1.15Si0.85 and YbGa xGe2-x probed by resonant x-ray emission and photoelectron spectroscopies

Hitoshi Yamaoka; Ignace Jarrige; Naohito Tsujii; Motoharu Imai; Jung Fu Lin; Masaharu Matsunami; Ritsuko Eguchi; Masashi Arita; Kenya Shimada; Hirofumi Namatame; Masaki Taniguchi; Munetaka Taguchi; Yasunori Senba; Haruhiko Ohashi; Nozomu Hiraoka; Hirofumi Ishii; Ku Ding Tsuei

doi:10.1103/PhysRevB.83.104525

Electronic structure of YbGa_1.15Si_0.85 and YbGa _xGe_2-x probed by resonant x-ray emission and photoelectron spectroscopies

Hitoshi Yamaoka, Ignace Jarrige, Naohito Tsujii, Motoharu Imai, Jung Fu Lin, Masaharu Matsunami, Ritsuko Eguchi, Masashi Arita, Kenya Shimada, Hirofumi Namatame, Masaki Taniguchi, Munetaka Taguchi, Yasunori Senba, Haruhiko Ohashi, Nozomu Hiraoka, Hirofumi Ishii, Ku Ding Tsuei

Research Institute for Interdisciplinary Science

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12 Citations (Scopus)

Abstract

We performed an x-ray spectroscopic study combining resonant x-ray emission spectroscopy (RXES) and photoelectron spectroscopy on the superconducting ternary silicide YbGa_1.15Si_0.85 and nonsuperconducting ternary germanide YbGa_xGe_2-x (x=1.0 and 1.1). The Yb valence for all three compounds is found to be about 2.3. In YbGa _1.15Si_0.85 no temperature dependence of the Yb valence is observed in the RXES spectra in the temperature range of 7-300 K, while the valence shows a drastic increase under pressure from the Yb2⁺ state partially including itinerant electrons to the localized Yb3⁺ state. Differences are observed in the valence-band spectra of the photoelectron spectroscopy between YbGa_1.15Si_0.85 and YbGa _xGe_2-x, which may be attributed to the difference of crystal structure. We conclude that both the crystal structure of the planar GaSi layer in YbGa_1.15Si_0.85 and the resultant electronic structure may have a crucial role in the occurrence of superconductivity.

Original language	English
Article number	104525
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	83
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.83.104525
Publication status	Published - Mar 31 2011

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Yamaoka, H., Jarrige, I., Tsujii, N., Imai, M., Lin, J. F., Matsunami, M., Eguchi, R., Arita, M., Shimada, K., Namatame, H., Taniguchi, M., Taguchi, M., Senba, Y., Ohashi, H., Hiraoka, N., Ishii, H., & Tsuei, K. D. (2011). Electronic structure of YbGa_1.15Si_0.85 and YbGa _xGe_2-x probed by resonant x-ray emission and photoelectron spectroscopies. Physical Review B - Condensed Matter and Materials Physics, 83(10), [104525]. https://doi.org/10.1103/PhysRevB.83.104525

Electronic structure of YbGa_1.15Si_0.85 and YbGa _xGe_2-x probed by resonant x-ray emission and photoelectron spectroscopies. / Yamaoka, Hitoshi; Jarrige, Ignace; Tsujii, Naohito; Imai, Motoharu; Lin, Jung Fu; Matsunami, Masaharu; Eguchi, Ritsuko; Arita, Masashi; Shimada, Kenya; Namatame, Hirofumi; Taniguchi, Masaki; Taguchi, Munetaka; Senba, Yasunori; Ohashi, Haruhiko; Hiraoka, Nozomu; Ishii, Hirofumi; Tsuei, Ku Ding.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 83, No. 10, 104525, 31.03.2011.

Research output: Contribution to journal › Article

Yamaoka, H, Jarrige, I, Tsujii, N, Imai, M, Lin, JF, Matsunami, M, Eguchi, R, Arita, M, Shimada, K, Namatame, H, Taniguchi, M, Taguchi, M, Senba, Y, Ohashi, H, Hiraoka, N, Ishii, H & Tsuei, KD 2011, 'Electronic structure of YbGa_1.15Si_0.85 and YbGa _xGe_2-x probed by resonant x-ray emission and photoelectron spectroscopies', Physical Review B - Condensed Matter and Materials Physics, vol. 83, no. 10, 104525. https://doi.org/10.1103/PhysRevB.83.104525

Yamaoka, Hitoshi ; Jarrige, Ignace ; Tsujii, Naohito ; Imai, Motoharu ; Lin, Jung Fu ; Matsunami, Masaharu ; Eguchi, Ritsuko ; Arita, Masashi ; Shimada, Kenya ; Namatame, Hirofumi ; Taniguchi, Masaki ; Taguchi, Munetaka ; Senba, Yasunori ; Ohashi, Haruhiko ; Hiraoka, Nozomu ; Ishii, Hirofumi ; Tsuei, Ku Ding. / Electronic structure of YbGa_1.15Si_0.85 and YbGa _xGe_2-x probed by resonant x-ray emission and photoelectron spectroscopies. In: Physical Review B - Condensed Matter and Materials Physics. 2011 ; Vol. 83, No. 10.

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title = "Electronic structure of YbGa1.15Si0.85 and YbGa xGe2-x probed by resonant x-ray emission and photoelectron spectroscopies",

abstract = "We performed an x-ray spectroscopic study combining resonant x-ray emission spectroscopy (RXES) and photoelectron spectroscopy on the superconducting ternary silicide YbGa1.15Si0.85 and nonsuperconducting ternary germanide YbGaxGe2-x (x=1.0 and 1.1). The Yb valence for all three compounds is found to be about 2.3. In YbGa 1.15Si0.85 no temperature dependence of the Yb valence is observed in the RXES spectra in the temperature range of 7-300 K, while the valence shows a drastic increase under pressure from the Yb2+ state partially including itinerant electrons to the localized Yb3+ state. Differences are observed in the valence-band spectra of the photoelectron spectroscopy between YbGa1.15Si0.85 and YbGa xGe2-x, which may be attributed to the difference of crystal structure. We conclude that both the crystal structure of the planar GaSi layer in YbGa1.15Si0.85 and the resultant electronic structure may have a crucial role in the occurrence of superconductivity.",

author = "Hitoshi Yamaoka and Ignace Jarrige and Naohito Tsujii and Motoharu Imai and Lin, {Jung Fu} and Masaharu Matsunami and Ritsuko Eguchi and Masashi Arita and Kenya Shimada and Hirofumi Namatame and Masaki Taniguchi and Munetaka Taguchi and Yasunori Senba and Haruhiko Ohashi and Nozomu Hiraoka and Hirofumi Ishii and Tsuei, {Ku Ding}",

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AU - Tsujii, Naohito

AU - Imai, Motoharu

AU - Lin, Jung Fu

AU - Matsunami, Masaharu

AU - Eguchi, Ritsuko

AU - Arita, Masashi

AU - Shimada, Kenya

AU - Namatame, Hirofumi

AU - Taniguchi, Masaki

AU - Taguchi, Munetaka

AU - Senba, Yasunori

AU - Ohashi, Haruhiko

AU - Hiraoka, Nozomu

AU - Ishii, Hirofumi

AU - Tsuei, Ku Ding

PY - 2011/3/31

Y1 - 2011/3/31

N2 - We performed an x-ray spectroscopic study combining resonant x-ray emission spectroscopy (RXES) and photoelectron spectroscopy on the superconducting ternary silicide YbGa1.15Si0.85 and nonsuperconducting ternary germanide YbGaxGe2-x (x=1.0 and 1.1). The Yb valence for all three compounds is found to be about 2.3. In YbGa 1.15Si0.85 no temperature dependence of the Yb valence is observed in the RXES spectra in the temperature range of 7-300 K, while the valence shows a drastic increase under pressure from the Yb2+ state partially including itinerant electrons to the localized Yb3+ state. Differences are observed in the valence-band spectra of the photoelectron spectroscopy between YbGa1.15Si0.85 and YbGa xGe2-x, which may be attributed to the difference of crystal structure. We conclude that both the crystal structure of the planar GaSi layer in YbGa1.15Si0.85 and the resultant electronic structure may have a crucial role in the occurrence of superconductivity.

AB - We performed an x-ray spectroscopic study combining resonant x-ray emission spectroscopy (RXES) and photoelectron spectroscopy on the superconducting ternary silicide YbGa1.15Si0.85 and nonsuperconducting ternary germanide YbGaxGe2-x (x=1.0 and 1.1). The Yb valence for all three compounds is found to be about 2.3. In YbGa 1.15Si0.85 no temperature dependence of the Yb valence is observed in the RXES spectra in the temperature range of 7-300 K, while the valence shows a drastic increase under pressure from the Yb2+ state partially including itinerant electrons to the localized Yb3+ state. Differences are observed in the valence-band spectra of the photoelectron spectroscopy between YbGa1.15Si0.85 and YbGa xGe2-x, which may be attributed to the difference of crystal structure. We conclude that both the crystal structure of the planar GaSi layer in YbGa1.15Si0.85 and the resultant electronic structure may have a crucial role in the occurrence of superconductivity.

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