Electronic structure of V O2 / Ti O2: Nb upon photocarrier injection

Ritsuko Eguchi, S. Tsuda, T. Kiss, A. Chainani, Yuji Muraoka, Z. Hiroi, S. Shin

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We study the photocarrier injected electronic structure of V O2 / Ti O2: Nb (≡p-n junction) thin-film heterostructure using photoemission spectroscopy, across the temperature-dependent metal-insulator transition in V O2. The valence band of V O2 shifts systematically to higher binding energy upon photocarrier injection (PCI). In the insulating phase, the energy shift as a function of irradiated power matches the surface photovoltage (SPV) behavior, while in the metallic phase, the energy shift follows the SPV trend but is reduced due to recombination. The temperature dependence of the energy shift between 200 and 330 K varies nearly linearly with the SPV. The study provides evidence for hole doping from Ti O2: Nb to V O2 by the PCI effect.

Original languageEnglish
Article number073102
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number7
DOIs
Publication statusPublished - Feb 9 2007
Externally publishedYes

Fingerprint

Electronic structure
photovoltages
injection
electronic structure
shift
Metal insulator transition
Photoelectron spectroscopy
Valence bands
Binding energy
Heterojunctions
p-n junctions
Doping (additives)
energy
Thin films
Temperature
photoelectric emission
binding energy
insulators
valence
trends

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Electronic structure of V O2 / Ti O2 : Nb upon photocarrier injection. / Eguchi, Ritsuko; Tsuda, S.; Kiss, T.; Chainani, A.; Muraoka, Yuji; Hiroi, Z.; Shin, S.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 75, No. 7, 073102, 09.02.2007.

Research output: Contribution to journalArticle

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