Electronic structure of U(Ru1-xRhx) 2Si2 studied by laser angle-resolved photoemission spectroscopy

R. Yoshida, Y. Nakamura, M. Fukui, Y. Haga, E. Yamamoto, Y. Onuki, M. Okawa, S. Shin, M. Hirai, Y. Muraoka, T. Yokoya

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Abstract

We have studied electronic structures of U(Ru1-xRh x)2Si2 employing ultrahigh-resolution laser angle-resolved photoemission spectroscopy to understand the effect of Rh substitution. A hole-like dispersive feature, which presumably has Rh d-band character, was observed in U(Ru1-xRhx)2Si 2 for both x = 0 and x = 0.03. However, although a heavy quasiparticle band appears in the hidden-order state of URu2Si 2 (x = 0), it was not observed for x 0.03 over the temperature range studied. In addition, it was found that energy-distribution curves at the Fermi vector of the hole-like band for x = 0.03 behave similarly to the Fermi-Dirac function. We also present the mapping of Fermi surfaces formed by the hole-like band, which stay nearly unaffected by Rh substitution.

Original languageEnglish
Article number012021
JournalJournal of Physics: Conference Series
Volume273
Issue number1
DOIs
Publication statusPublished - Jan 1 2011

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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