Electronic structure of the novel filled skutterudite PrPt 4Ge12 superconductor

Yoshiaki Nakamura, Hiroyuki Okazaki, Rikiya Yoshida, Takanori Wakita, Masaaki Hirai, Yuji Muraoka, Hiroyuki Takeya, Kazuto Hirata, Hiroshi Kumigashira, Masaharu Oshima, Takayoshi Yokoya

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have performed soft x-ray photoemission spectroscopy (SXPES) and resonant photoemission spectroscopy (RPES) of the filled skutterudite superconductor PrPt4Ge12 in order to study the electronic structure of valence band and the character of Pr 4f. SXPES of PrPt 4Ge12 measured with 1200 eV photon energy, where spectral contribution of Pr 4f is negligible, was found nearly identical with that of LaPt4Ge12, indicating similarity of Pt-Ge derived electronic states of the two compounds. Good correspondence with band calculations allows us to ascribe the dominant Ge 4p character of the density of states at the Fermi level (EF). Pr 3d → 4f RPES shows that, although Pr 4f electrons in PrPt4Ge12 are not as strongly hybridized with conduction electrons near EF as in PrFe 4P12, there are finite Pr 4f contribution to the states near EF in PrPt4Ge12. These PES results give the information of fundamental electronic structure for understanding the physical properties of the novel filled skutterudite superconductor PrPt 4Ge12.

Original languageEnglish
Article number124701
JournalJournal of the Physical Society of Japan
Volume79
Issue number12
DOIs
Publication statusPublished - Dec 2010

Fingerprint

photoelectric emission
electronic structure
spectroscopy
conduction electrons
x rays
physical properties
valence
photons
electronics
electrons
energy

Keywords

  • Electronic structure
  • Filled skutterudite
  • Pr 3d → 4f resonant photoemission
  • PrPtGe
  • Soft x-ray photoemission spectroscopy
  • Superconductor

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electronic structure of the novel filled skutterudite PrPt 4Ge12 superconductor. / Nakamura, Yoshiaki; Okazaki, Hiroyuki; Yoshida, Rikiya; Wakita, Takanori; Hirai, Masaaki; Muraoka, Yuji; Takeya, Hiroyuki; Hirata, Kazuto; Kumigashira, Hiroshi; Oshima, Masaharu; Yokoya, Takayoshi.

In: Journal of the Physical Society of Japan, Vol. 79, No. 12, 124701, 12.2010.

Research output: Contribution to journalArticle

Nakamura, Y, Okazaki, H, Yoshida, R, Wakita, T, Hirai, M, Muraoka, Y, Takeya, H, Hirata, K, Kumigashira, H, Oshima, M & Yokoya, T 2010, 'Electronic structure of the novel filled skutterudite PrPt 4Ge12 superconductor', Journal of the Physical Society of Japan, vol. 79, no. 12, 124701. https://doi.org/10.1143/JPSJ.79.124701
Nakamura, Yoshiaki ; Okazaki, Hiroyuki ; Yoshida, Rikiya ; Wakita, Takanori ; Hirai, Masaaki ; Muraoka, Yuji ; Takeya, Hiroyuki ; Hirata, Kazuto ; Kumigashira, Hiroshi ; Oshima, Masaharu ; Yokoya, Takayoshi. / Electronic structure of the novel filled skutterudite PrPt 4Ge12 superconductor. In: Journal of the Physical Society of Japan. 2010 ; Vol. 79, No. 12.
@article{3fad8e25d5f24e288783f7a2941f7543,
title = "Electronic structure of the novel filled skutterudite PrPt 4Ge12 superconductor",
abstract = "We have performed soft x-ray photoemission spectroscopy (SXPES) and resonant photoemission spectroscopy (RPES) of the filled skutterudite superconductor PrPt4Ge12 in order to study the electronic structure of valence band and the character of Pr 4f. SXPES of PrPt 4Ge12 measured with 1200 eV photon energy, where spectral contribution of Pr 4f is negligible, was found nearly identical with that of LaPt4Ge12, indicating similarity of Pt-Ge derived electronic states of the two compounds. Good correspondence with band calculations allows us to ascribe the dominant Ge 4p character of the density of states at the Fermi level (EF). Pr 3d → 4f RPES shows that, although Pr 4f electrons in PrPt4Ge12 are not as strongly hybridized with conduction electrons near EF as in PrFe 4P12, there are finite Pr 4f contribution to the states near EF in PrPt4Ge12. These PES results give the information of fundamental electronic structure for understanding the physical properties of the novel filled skutterudite superconductor PrPt 4Ge12.",
keywords = "Electronic structure, Filled skutterudite, Pr 3d → 4f resonant photoemission, PrPtGe, Soft x-ray photoemission spectroscopy, Superconductor",
author = "Yoshiaki Nakamura and Hiroyuki Okazaki and Rikiya Yoshida and Takanori Wakita and Masaaki Hirai and Yuji Muraoka and Hiroyuki Takeya and Kazuto Hirata and Hiroshi Kumigashira and Masaharu Oshima and Takayoshi Yokoya",
year = "2010",
month = "12",
doi = "10.1143/JPSJ.79.124701",
language = "English",
volume = "79",
journal = "Journal of the Physical Society of Japan",
issn = "0031-9015",
publisher = "Physical Society of Japan",
number = "12",

}

TY - JOUR

T1 - Electronic structure of the novel filled skutterudite PrPt 4Ge12 superconductor

AU - Nakamura, Yoshiaki

AU - Okazaki, Hiroyuki

AU - Yoshida, Rikiya

AU - Wakita, Takanori

AU - Hirai, Masaaki

AU - Muraoka, Yuji

AU - Takeya, Hiroyuki

AU - Hirata, Kazuto

AU - Kumigashira, Hiroshi

AU - Oshima, Masaharu

AU - Yokoya, Takayoshi

PY - 2010/12

Y1 - 2010/12

N2 - We have performed soft x-ray photoemission spectroscopy (SXPES) and resonant photoemission spectroscopy (RPES) of the filled skutterudite superconductor PrPt4Ge12 in order to study the electronic structure of valence band and the character of Pr 4f. SXPES of PrPt 4Ge12 measured with 1200 eV photon energy, where spectral contribution of Pr 4f is negligible, was found nearly identical with that of LaPt4Ge12, indicating similarity of Pt-Ge derived electronic states of the two compounds. Good correspondence with band calculations allows us to ascribe the dominant Ge 4p character of the density of states at the Fermi level (EF). Pr 3d → 4f RPES shows that, although Pr 4f electrons in PrPt4Ge12 are not as strongly hybridized with conduction electrons near EF as in PrFe 4P12, there are finite Pr 4f contribution to the states near EF in PrPt4Ge12. These PES results give the information of fundamental electronic structure for understanding the physical properties of the novel filled skutterudite superconductor PrPt 4Ge12.

AB - We have performed soft x-ray photoemission spectroscopy (SXPES) and resonant photoemission spectroscopy (RPES) of the filled skutterudite superconductor PrPt4Ge12 in order to study the electronic structure of valence band and the character of Pr 4f. SXPES of PrPt 4Ge12 measured with 1200 eV photon energy, where spectral contribution of Pr 4f is negligible, was found nearly identical with that of LaPt4Ge12, indicating similarity of Pt-Ge derived electronic states of the two compounds. Good correspondence with band calculations allows us to ascribe the dominant Ge 4p character of the density of states at the Fermi level (EF). Pr 3d → 4f RPES shows that, although Pr 4f electrons in PrPt4Ge12 are not as strongly hybridized with conduction electrons near EF as in PrFe 4P12, there are finite Pr 4f contribution to the states near EF in PrPt4Ge12. These PES results give the information of fundamental electronic structure for understanding the physical properties of the novel filled skutterudite superconductor PrPt 4Ge12.

KW - Electronic structure

KW - Filled skutterudite

KW - Pr 3d → 4f resonant photoemission

KW - PrPtGe

KW - Soft x-ray photoemission spectroscopy

KW - Superconductor

UR - http://www.scopus.com/inward/record.url?scp=78651228486&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78651228486&partnerID=8YFLogxK

U2 - 10.1143/JPSJ.79.124701

DO - 10.1143/JPSJ.79.124701

M3 - Article

AN - SCOPUS:78651228486

VL - 79

JO - Journal of the Physical Society of Japan

JF - Journal of the Physical Society of Japan

SN - 0031-9015

IS - 12

M1 - 124701

ER -