Abstract
Well-crystallized epitaxial FeTiO3+δ films were prepared on the sapphire substrate by reactive sputtering technique. A wide range of oxygen nonstoichiometry from FeTiO3 to FeTiO3.5 was successfully controlled by controlling the sputtering conditions. All films had uniform structure without phase separation even for the highly oxidized FeTiO3.5 film. Structures, magnetic and electronic properties of the FeTiO3+δ films were seriously influenced by the oxygen nonstoichiometry. The nearly stoichiometric FeTiO3 films had a R structure, while the nonstoichiometric FeTiO3.5 had a R c structure. With increasing the oxygen nonstoichiometry, the valence states of Fe ions in FeTiO3+δ were examined to be changed from Fe2+ to Fe3+ by means of both Mössbauer and XPS spectroscopy. The Ti 2p core-level XPS spectra clearly confirmed the valence states of Ti4+ ions in nonstoichiometric FeTiO3.5. However the Ti ions in stoichiometric FeTiO3 suggested the abundant electron density than the conventional Ti4+ ions due to the Fe2+ to Ti 4+ intervalence charge transfer.
| Original language | English |
|---|---|
| Article number | 012043 |
| Journal | Journal of Physics: Conference Series |
| Volume | 100 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Mar 1 2008 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Electronic structure of stoichiometric and non-stoichiometric epitaxial FeTiO3+δ films. / Fujii, Tatsuo; Takada, Y.; Nakanishi, Makoto; Takada, J.; Kimura, M.; Yoshikawa, H.
In: Journal of Physics: Conference Series, Vol. 100, No. 1, 012043, 01.03.2008.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Electronic structure of stoichiometric and non-stoichiometric epitaxial FeTiO3+δ films
AU - Fujii, Tatsuo
AU - Takada, Y.
AU - Nakanishi, Makoto
AU - Takada, J.
AU - Kimura, M.
AU - Yoshikawa, H.
PY - 2008/3/1
Y1 - 2008/3/1
N2 - Well-crystallized epitaxial FeTiO3+δ films were prepared on the sapphire substrate by reactive sputtering technique. A wide range of oxygen nonstoichiometry from FeTiO3 to FeTiO3.5 was successfully controlled by controlling the sputtering conditions. All films had uniform structure without phase separation even for the highly oxidized FeTiO3.5 film. Structures, magnetic and electronic properties of the FeTiO3+δ films were seriously influenced by the oxygen nonstoichiometry. The nearly stoichiometric FeTiO3 films had a R structure, while the nonstoichiometric FeTiO3.5 had a R c structure. With increasing the oxygen nonstoichiometry, the valence states of Fe ions in FeTiO3+δ were examined to be changed from Fe2+ to Fe3+ by means of both Mössbauer and XPS spectroscopy. The Ti 2p core-level XPS spectra clearly confirmed the valence states of Ti4+ ions in nonstoichiometric FeTiO3.5. However the Ti ions in stoichiometric FeTiO3 suggested the abundant electron density than the conventional Ti4+ ions due to the Fe2+ to Ti 4+ intervalence charge transfer.
AB - Well-crystallized epitaxial FeTiO3+δ films were prepared on the sapphire substrate by reactive sputtering technique. A wide range of oxygen nonstoichiometry from FeTiO3 to FeTiO3.5 was successfully controlled by controlling the sputtering conditions. All films had uniform structure without phase separation even for the highly oxidized FeTiO3.5 film. Structures, magnetic and electronic properties of the FeTiO3+δ films were seriously influenced by the oxygen nonstoichiometry. The nearly stoichiometric FeTiO3 films had a R structure, while the nonstoichiometric FeTiO3.5 had a R c structure. With increasing the oxygen nonstoichiometry, the valence states of Fe ions in FeTiO3+δ were examined to be changed from Fe2+ to Fe3+ by means of both Mössbauer and XPS spectroscopy. The Ti 2p core-level XPS spectra clearly confirmed the valence states of Ti4+ ions in nonstoichiometric FeTiO3.5. However the Ti ions in stoichiometric FeTiO3 suggested the abundant electron density than the conventional Ti4+ ions due to the Fe2+ to Ti 4+ intervalence charge transfer.
UR - http://www.scopus.com/inward/record.url?scp=44649126848&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=44649126848&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/100/1/012043
DO - 10.1088/1742-6596/100/1/012043
M3 - Article
AN - SCOPUS:44649126848
VL - 100
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012043
ER -