Electronic structure of self-doped layered Eu3 F4Bi2 S4 material revealed by x-ray absorption spectroscopy and photoelectron spectromicroscopy

E. Paris, T. Sugimoto, Takanori Wakita, A. Barinov, Kensei Terashima, V. Kandyba, O. Proux, J. Kajitani, R. Higashinaka, T. D. Matsuda, Y. Aoki, Takayoshi Yokoya, T. Mizokawa, N. L. Saini

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Abstract

We have studied the electronic structure of Eu3F4Bi2S4 using a combination of Eu L3-edge x-ray absorption spectroscopy (XAS) and space-resolved angle-resolved photoemission spectroscopy (ARPES). From the Eu L3-edge XAS, we have found that the Eu in this system is in mixed valence state with coexistence of Eu2+/Eu3+. The bulk charge doping was estimated to be ∼0.3 per Bi site in Eu3F4Bi2S4, which corresponds to the nominal x in a typical REO1-xFxBiS2 system (RE: rare-earth elements). From the space-resolved ARPES, we have ruled out the possibility of any microscale phase separation of Eu valence in the system. Using a microfocused beam we have observed the band structure as well as the Fermi surface that appeared similar to other compounds of this family with disconnected rectangular electronlike pockets around the X point. The Luttinger volume analysis gives the effective carrier to be 0.23 electrons per Bi site in Eu3F4Bi2S4, indicating that the system is likely to be in the underdoped region of its superconducting phase diagram.

Original languageEnglish
Article number035152
JournalPhysical Review B
Volume95
Issue number3
DOIs
Publication statusPublished - Jan 30 2017

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Photoelectron spectroscopy
Photoelectrons
Absorption spectroscopy
x ray absorption
x ray spectroscopy
Electronic structure
absorption spectroscopy
photoelectrons
photoelectric emission
electronic structure
valence
X rays
Fermi surface
Rare earth elements
Phase separation
microbalances
Band structure
spectroscopy
Fermi surfaces
Phase diagrams

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Electronic structure of self-doped layered Eu3 F4Bi2 S4 material revealed by x-ray absorption spectroscopy and photoelectron spectromicroscopy. / Paris, E.; Sugimoto, T.; Wakita, Takanori; Barinov, A.; Terashima, Kensei; Kandyba, V.; Proux, O.; Kajitani, J.; Higashinaka, R.; Matsuda, T. D.; Aoki, Y.; Yokoya, Takayoshi; Mizokawa, T.; Saini, N. L.

In: Physical Review B, Vol. 95, No. 3, 035152, 30.01.2017.

Research output: Contribution to journalArticle

Paris, E, Sugimoto, T, Wakita, T, Barinov, A, Terashima, K, Kandyba, V, Proux, O, Kajitani, J, Higashinaka, R, Matsuda, TD, Aoki, Y, Yokoya, T, Mizokawa, T & Saini, NL 2017, 'Electronic structure of self-doped layered Eu3 F4Bi2 S4 material revealed by x-ray absorption spectroscopy and photoelectron spectromicroscopy', Physical Review B, vol. 95, no. 3, 035152. https://doi.org/10.1103/PhysRevB.95.035152
Paris, E. ; Sugimoto, T. ; Wakita, Takanori ; Barinov, A. ; Terashima, Kensei ; Kandyba, V. ; Proux, O. ; Kajitani, J. ; Higashinaka, R. ; Matsuda, T. D. ; Aoki, Y. ; Yokoya, Takayoshi ; Mizokawa, T. ; Saini, N. L. / Electronic structure of self-doped layered Eu3 F4Bi2 S4 material revealed by x-ray absorption spectroscopy and photoelectron spectromicroscopy. In: Physical Review B. 2017 ; Vol. 95, No. 3.
@article{d1d97f9e5ff54fd8926c06bc1cdd9938,
title = "Electronic structure of self-doped layered Eu3 F4Bi2 S4 material revealed by x-ray absorption spectroscopy and photoelectron spectromicroscopy",
abstract = "We have studied the electronic structure of Eu3F4Bi2S4 using a combination of Eu L3-edge x-ray absorption spectroscopy (XAS) and space-resolved angle-resolved photoemission spectroscopy (ARPES). From the Eu L3-edge XAS, we have found that the Eu in this system is in mixed valence state with coexistence of Eu2+/Eu3+. The bulk charge doping was estimated to be ∼0.3 per Bi site in Eu3F4Bi2S4, which corresponds to the nominal x in a typical REO1-xFxBiS2 system (RE: rare-earth elements). From the space-resolved ARPES, we have ruled out the possibility of any microscale phase separation of Eu valence in the system. Using a microfocused beam we have observed the band structure as well as the Fermi surface that appeared similar to other compounds of this family with disconnected rectangular electronlike pockets around the X point. The Luttinger volume analysis gives the effective carrier to be 0.23 electrons per Bi site in Eu3F4Bi2S4, indicating that the system is likely to be in the underdoped region of its superconducting phase diagram.",
author = "E. Paris and T. Sugimoto and Takanori Wakita and A. Barinov and Kensei Terashima and V. Kandyba and O. Proux and J. Kajitani and R. Higashinaka and Matsuda, {T. D.} and Y. Aoki and Takayoshi Yokoya and T. Mizokawa and Saini, {N. L.}",
year = "2017",
month = "1",
day = "30",
doi = "10.1103/PhysRevB.95.035152",
language = "English",
volume = "95",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "3",

}

TY - JOUR

T1 - Electronic structure of self-doped layered Eu3 F4Bi2 S4 material revealed by x-ray absorption spectroscopy and photoelectron spectromicroscopy

AU - Paris, E.

AU - Sugimoto, T.

AU - Wakita, Takanori

AU - Barinov, A.

AU - Terashima, Kensei

AU - Kandyba, V.

AU - Proux, O.

AU - Kajitani, J.

AU - Higashinaka, R.

AU - Matsuda, T. D.

AU - Aoki, Y.

AU - Yokoya, Takayoshi

AU - Mizokawa, T.

AU - Saini, N. L.

PY - 2017/1/30

Y1 - 2017/1/30

N2 - We have studied the electronic structure of Eu3F4Bi2S4 using a combination of Eu L3-edge x-ray absorption spectroscopy (XAS) and space-resolved angle-resolved photoemission spectroscopy (ARPES). From the Eu L3-edge XAS, we have found that the Eu in this system is in mixed valence state with coexistence of Eu2+/Eu3+. The bulk charge doping was estimated to be ∼0.3 per Bi site in Eu3F4Bi2S4, which corresponds to the nominal x in a typical REO1-xFxBiS2 system (RE: rare-earth elements). From the space-resolved ARPES, we have ruled out the possibility of any microscale phase separation of Eu valence in the system. Using a microfocused beam we have observed the band structure as well as the Fermi surface that appeared similar to other compounds of this family with disconnected rectangular electronlike pockets around the X point. The Luttinger volume analysis gives the effective carrier to be 0.23 electrons per Bi site in Eu3F4Bi2S4, indicating that the system is likely to be in the underdoped region of its superconducting phase diagram.

AB - We have studied the electronic structure of Eu3F4Bi2S4 using a combination of Eu L3-edge x-ray absorption spectroscopy (XAS) and space-resolved angle-resolved photoemission spectroscopy (ARPES). From the Eu L3-edge XAS, we have found that the Eu in this system is in mixed valence state with coexistence of Eu2+/Eu3+. The bulk charge doping was estimated to be ∼0.3 per Bi site in Eu3F4Bi2S4, which corresponds to the nominal x in a typical REO1-xFxBiS2 system (RE: rare-earth elements). From the space-resolved ARPES, we have ruled out the possibility of any microscale phase separation of Eu valence in the system. Using a microfocused beam we have observed the band structure as well as the Fermi surface that appeared similar to other compounds of this family with disconnected rectangular electronlike pockets around the X point. The Luttinger volume analysis gives the effective carrier to be 0.23 electrons per Bi site in Eu3F4Bi2S4, indicating that the system is likely to be in the underdoped region of its superconducting phase diagram.

UR - http://www.scopus.com/inward/record.url?scp=85012254483&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85012254483&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.95.035152

DO - 10.1103/PhysRevB.95.035152

M3 - Article

AN - SCOPUS:85012254483

VL - 95

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 3

M1 - 035152

ER -