Electronic structure of layered transition-metal dichalcogenides Nb 1-xTixXc2 (Xc = S, Se, Te) studied by angle-resolved photoemission spectroscopy

T. Sato, H. Komatsu, K. Terashima, T. Takahashi, M. Shimakawa, K. Hayashi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have performed systematic high-resolution angle-resolved photoemission spectroscopy (ARPES) on layered transition-metal dichalcogenides Nb 1-xTixXc2 (Xc = S, Se, Te) to study the mechanism of metal-semiconductor transition as a function of x and Xc. We found a pseudogap near EF in the S-and Se-based compounds while a clear Fermi edge is observed in the Te-based compound. The existence of the pseudogap indicates the strong scattering of electrons by the random potential caused by substitution, which prevents formation of the charge density wave and at the same time decreases the metallic conductivity. The metallic character of Nb 1-xTixTe2 is explained in terms of the relatively strong Te 5p-Nb 4d (Ti 3d) hybridization near EF.

Original languageEnglish
Pages (from-to)8599-8608
Number of pages10
JournalJournal of Physics Condensed Matter
Volume16
Issue number47
DOIs
Publication statusPublished - Dec 1 2004

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Electronic structure of layered transition-metal dichalcogenides Nb <sub>1-x</sub>Ti<sub>x</sub>Xc<sub>2</sub> (Xc = S, Se, Te) studied by angle-resolved photoemission spectroscopy'. Together they form a unique fingerprint.

  • Cite this