Electronic structure of hole-doped Sr1+xLa1-xFeO4 studied by UPS and XAS

Takahisa Omata, Kazushige Ueda, Hideo Hosono, Takafumi Miyazaki, Shinji Hasegawa, Naoyuki Ueda, Hiroshi Kawazoe

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The electronic structure of K2NiF4-type Sr1+xLa1-xFeO4 compounds (0≤x≤0.3) was studied by ultraviolet-photoemission and x-ray-absorption spectroscopies. Resonant photoemission measurements demonstrated that although the satellite feature of Sr1-xLa1-xFeO4 was attributed to d4 final states, the whole valence band was constructed from well mixed Fe 3d and O 2p states. It was suggested that the parent Sr1+xLa1-xFeO4 compound is intermediate between Mott-Hubbard and charge-transfer insulators. O K-edge and Fe K-edge x-ray-absorption measurements showed that hole bands composed of O 2p and Fe 3d character were formed in the original conduction-band edge upon hole doping, while the valence-band structure obtained by nonresonant photoemission measurements did not change. Changes in the electrical and magnetic properties were correlated with those in electronic structure.

Original languageEnglish
Pages (from-to)10200-10205
Number of pages6
JournalPhysical Review B
Issue number15
Publication statusPublished - Jan 1 1994
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Omata, T., Ueda, K., Hosono, H., Miyazaki, T., Hasegawa, S., Ueda, N., & Kawazoe, H. (1994). Electronic structure of hole-doped Sr1+xLa1-xFeO4 studied by UPS and XAS. Physical Review B, 49(15), 10200-10205. https://doi.org/10.1103/PhysRevB.49.10200