Electronic structure of FeSi1-x Gex and FeGa3 investigated by soft x-ray photoelectron spectroscopy complementary to x-ray emission spectroscopy

H. Yamaoka, M. Matsunami, R. Eguchi, Y. Ishida, N. Tsujii, Y. Takahashi, Y. Senba, H. Ohashi, S. Shin

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Soft x-ray photoelectron spectroscopy for FeSi1-x Gex (x=0, 0.11, 0.19, 0.26, and 0.44) and FeGa3 was performed at FeL absorption edge complementary to the x-ray emission spectroscopy. The absorption and valence-band spectra show the phase transition of the electronic state between x=0.26 and 0.44 in FeSi1-x Gex accompanying the narrowing of the density of state near the Fermi edge. High-resolution x-ray absorption spectra (total electron yields) at Fe2 p3/2 absorption edge resolve the fine structure, originated from the valence and Auger component of electrons. Resonant valence-band and constant initial-state spectra show Fano-type profile at Fe2 p3/2 absorption edge only for the x=0.44 sample but not for the x=0 sample and FeGa3. The crossover point, where the Raman and Auger features mix, is near the Fe2p absorption edge for both of the x=0 and 0.44 samples, showing the delocalized 3d states.

Original languageEnglish
Article number045125
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume78
Issue number4
DOIs
Publication statusPublished - Jul 30 2008
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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