Electronic structure of electron-doped superconductor Nd 2-xCexCuO4 from the Analysis of Cu 2p-XPS

Kozo Okada, Yasuhiro Seino, Akio Kotani

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The role of the Cu 4s conduction band in the Cu 2p-XPS (X-ray photoemission spectrum) of Nd2-xCexCuO4 is investigated on the basis of both a simple CuO4 cluster model and the impurity Anderson model. The impurity Anderson model consists of the impurity Cu 3d shell and the valence and conduction bands which are obtained from the O 2p and Cu 4s bands by the tight-binding approximation. From the carrier concentration dependence of the Cu 2p-XPS, the electron doping mechanism is discussed. If the Cu 4s level is lower in energy than that estimated from the energy band calculation by a few eV, the doped electrons are shown to occupy the Cu 4s band in the low-doping regime.

Original languageEnglish
Pages (from-to)1040-1050
Number of pages11
JournalJournal of the Physical Society of Japan
Volume60
Issue number3
Publication statusPublished - Mar 1991
Externally publishedYes

Fingerprint

electronic structure
impurities
conduction bands
electrons
energy bands
photoelectric emission
valence
approximation
x rays
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electronic structure of electron-doped superconductor Nd 2-xCexCuO4 from the Analysis of Cu 2p-XPS. / Okada, Kozo; Seino, Yasuhiro; Kotani, Akio.

In: Journal of the Physical Society of Japan, Vol. 60, No. 3, 03.1991, p. 1040-1050.

Research output: Contribution to journalArticle

@article{47b448c6c8c9485392153c842a6e4902,
title = "Electronic structure of electron-doped superconductor Nd 2-xCexCuO4 from the Analysis of Cu 2p-XPS",
abstract = "The role of the Cu 4s conduction band in the Cu 2p-XPS (X-ray photoemission spectrum) of Nd2-xCexCuO4 is investigated on the basis of both a simple CuO4 cluster model and the impurity Anderson model. The impurity Anderson model consists of the impurity Cu 3d shell and the valence and conduction bands which are obtained from the O 2p and Cu 4s bands by the tight-binding approximation. From the carrier concentration dependence of the Cu 2p-XPS, the electron doping mechanism is discussed. If the Cu 4s level is lower in energy than that estimated from the energy band calculation by a few eV, the doped electrons are shown to occupy the Cu 4s band in the low-doping regime.",
author = "Kozo Okada and Yasuhiro Seino and Akio Kotani",
year = "1991",
month = "3",
language = "English",
volume = "60",
pages = "1040--1050",
journal = "Journal of the Physical Society of Japan",
issn = "0031-9015",
publisher = "Physical Society of Japan",
number = "3",

}

TY - JOUR

T1 - Electronic structure of electron-doped superconductor Nd 2-xCexCuO4 from the Analysis of Cu 2p-XPS

AU - Okada, Kozo

AU - Seino, Yasuhiro

AU - Kotani, Akio

PY - 1991/3

Y1 - 1991/3

N2 - The role of the Cu 4s conduction band in the Cu 2p-XPS (X-ray photoemission spectrum) of Nd2-xCexCuO4 is investigated on the basis of both a simple CuO4 cluster model and the impurity Anderson model. The impurity Anderson model consists of the impurity Cu 3d shell and the valence and conduction bands which are obtained from the O 2p and Cu 4s bands by the tight-binding approximation. From the carrier concentration dependence of the Cu 2p-XPS, the electron doping mechanism is discussed. If the Cu 4s level is lower in energy than that estimated from the energy band calculation by a few eV, the doped electrons are shown to occupy the Cu 4s band in the low-doping regime.

AB - The role of the Cu 4s conduction band in the Cu 2p-XPS (X-ray photoemission spectrum) of Nd2-xCexCuO4 is investigated on the basis of both a simple CuO4 cluster model and the impurity Anderson model. The impurity Anderson model consists of the impurity Cu 3d shell and the valence and conduction bands which are obtained from the O 2p and Cu 4s bands by the tight-binding approximation. From the carrier concentration dependence of the Cu 2p-XPS, the electron doping mechanism is discussed. If the Cu 4s level is lower in energy than that estimated from the energy band calculation by a few eV, the doped electrons are shown to occupy the Cu 4s band in the low-doping regime.

UR - http://www.scopus.com/inward/record.url?scp=0039191442&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0039191442&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0039191442

VL - 60

SP - 1040

EP - 1050

JO - Journal of the Physical Society of Japan

JF - Journal of the Physical Society of Japan

SN - 0031-9015

IS - 3

ER -