Electronic structure of CeCuAs2

A. Chainani, M. Matsunami, M. Taguchi, Ritsuko Eguchi, Y. Takata, M. Oura, S. Shin, K. Sengupta, E. V. Sampathkumaran, Th Doert, Y. Senba, H. Ohashi, K. Tamasaku, Y. Kohmura, M. Yabashi, T. Ishikawa

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We study the electronic structure of CeCuAs2, which is known to show an anomalous negative temperature coefficient of resistivity below room temperature, while the thermopower shows metallic behavior. We carry out hard x-ray photoemission spectroscopy (PES), x-ray absorption spectroscopy (XAS), and resonant PES across the Ce 3d-4f and Cu 2p-3d thresholds to investigate the role of Kondo screening in CeCuAs2. The Ce 3d core-level PES shows the f0, f1, and f2 features, and the Ce 3d-4f XAS shows corresponding features due to transitions into the f1 and f2 states, as in Kondo systems. The spectral feature assignments are confirmed by single-impurity Anderson model calculations and indicate a nearly trivalent-Ce configuration with small but finite mixed valency. The resonant PES valence band spectra across the Ce 3d-4f threshold show an intense Ce 4f1 resonance just below the Fermi level, while the Ce 4f0 feature is observed at a binding energy of 2.5 eV. The obtained f partial density of states shows an unusual pseudogaplike dip at the Fermi level in CeCuAs2. The results indicate the importance of Kondo screening and a pseudogap in the f partial density of states for the anomalous transport and magnetic properties of CeCuAs2.

Original languageEnglish
Article number235117
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume89
Issue number23
DOIs
Publication statusPublished - Jun 17 2014

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Photoelectron spectroscopy
Electronic structure
photoelectric emission
electronic structure
Fermi level
Absorption spectroscopy
x ray absorption
X rays
x ray spectroscopy
spectroscopy
Screening
absorption spectroscopy
screening
Negative temperature coefficient
Core levels
thresholds
Thermoelectric power
Valence bands
Binding energy
Transport properties

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Chainani, A., Matsunami, M., Taguchi, M., Eguchi, R., Takata, Y., Oura, M., ... Ishikawa, T. (2014). Electronic structure of CeCuAs2. Physical Review B - Condensed Matter and Materials Physics, 89(23), [235117]. https://doi.org/10.1103/PhysRevB.89.235117

Electronic structure of CeCuAs2. / Chainani, A.; Matsunami, M.; Taguchi, M.; Eguchi, Ritsuko; Takata, Y.; Oura, M.; Shin, S.; Sengupta, K.; Sampathkumaran, E. V.; Doert, Th; Senba, Y.; Ohashi, H.; Tamasaku, K.; Kohmura, Y.; Yabashi, M.; Ishikawa, T.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 89, No. 23, 235117, 17.06.2014.

Research output: Contribution to journalArticle

Chainani, A, Matsunami, M, Taguchi, M, Eguchi, R, Takata, Y, Oura, M, Shin, S, Sengupta, K, Sampathkumaran, EV, Doert, T, Senba, Y, Ohashi, H, Tamasaku, K, Kohmura, Y, Yabashi, M & Ishikawa, T 2014, 'Electronic structure of CeCuAs2', Physical Review B - Condensed Matter and Materials Physics, vol. 89, no. 23, 235117. https://doi.org/10.1103/PhysRevB.89.235117
Chainani, A. ; Matsunami, M. ; Taguchi, M. ; Eguchi, Ritsuko ; Takata, Y. ; Oura, M. ; Shin, S. ; Sengupta, K. ; Sampathkumaran, E. V. ; Doert, Th ; Senba, Y. ; Ohashi, H. ; Tamasaku, K. ; Kohmura, Y. ; Yabashi, M. ; Ishikawa, T. / Electronic structure of CeCuAs2. In: Physical Review B - Condensed Matter and Materials Physics. 2014 ; Vol. 89, No. 23.
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