Electronic structure in the band gap of lightly doped by high-resolution x-ray absorption spectroscopy

T. Higuchi; T. Tsukamoto; K. Kobayashi; Y. Ishiwata; M. Fujisawa; T. Yokoya; S. Yamaguchi; S. Shin

doi:10.1103/PhysRevB.61.12860

Electronic structure in the band gap of lightly doped by high-resolution x-ray absorption spectroscopy

T. Higuchi, T. Tsukamoto, K. Kobayashi, Y. Ishiwata, M. Fujisawa, T. Yokoya, S. Yamaguchi, S. Shin

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

The electronic structure of lightly Nb-doped (Formula presented) has been investigated using high resolution x-ray absorption spectroscopy (XAS). Below the O (Formula presented) threshold, XAS spectra show two features due to empty states whose energy positions match with those of the (Formula presented) photoemission spectra in the band gap energy region of the parent undoped (Formula presented) Similar features are also observed in lightly La-doped (Formula presented) These features exhibit systematic temperature dependence, which is well explained by the Fermi-Dirac distribution function. This indicates that the two features in the band gap are real bulk states such as simple donor states.

Original language	English
Pages (from-to)	12860-12863
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	61
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.61.12860
Publication status	Published - Jan 1 2000
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Electronic structure in the band gap of lightly doped by high-resolution x-ray absorption spectroscopy. / Higuchi, T.; Tsukamoto, T.; Kobayashi, K.; Ishiwata, Y.; Fujisawa, M.; Yokoya, T.; Yamaguchi, S.; Shin, S.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 61, No. 19, 01.01.2000, p. 12860-12863.

Research output: Contribution to journal › Article › peer-review

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AU - Yamaguchi, S.

AU - Shin, S.

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