Electronic structure and superconducting gap of silicon clathrate (formula presented) studied with ultrahigh-resolution photoemission spectroscopy

A. Shintani, S. Yamanaka, T. Yokoya, S. Shin, A. Fukushima, T. Kiss, K. Kobayashi, K. Moriguchi, H. Fukuoka

Research output: Contribution to journalArticle

Abstract

We study the electronic structure and superconducting transition of silicon clathrate (formula presented) using photoemission spectroscopy. We observe a narrow band at the Fermi level (formula presented) whose width (∼0.3 eV) is substantially smaller than that of band structure calculations (∼1.5 eV). Ultrahigh-resolution measurements show a superconducting gap at 5.4 K (formula presented) Fine structures associated with phonons are observed within 70 meV of (formula presented) These results characterize (formula presented) as a weak-coupling superconductor most probably driven by phonon.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number17
DOIs
Publication statusPublished - 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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