Electronic structure and superconducting gap of silicon clathrate Ba8Si46 studied with ultrahigh-resolution photoemission spectroscopy

T. Yokoya, A. Fukushima, T. Kiss, K. Kobayashi, S. Shin, K. Moriguchi, A. Shintani, H. Fukuoka, S. Yamanaka

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40 Citations (Scopus)


We study the electronic structure and superconducting transition of silicon clathrate Ba8Si46 (Tc=8 K) using photoemission spectroscopy. We observe a narrow band at the Fermi level (EF), whose width (∼0.3 eV) is substantially smaller than that of band structure calculations (∼1.5 eV). Ultrahigh-resolution measurements show a superconducting gap at 5.4 K [2Δ(0)/kBTc=3.51]. Fine structures associated with phonons are observed within 70 meV of EF. These results characterize Ba8Si46 as a weak-coupling superconductor most probably driven by phonon.

Original languageEnglish
Article number172504
Pages (from-to)1725041-1725044
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number17
Publication statusPublished - Nov 1 2001
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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