Electronic structure and superconducting gap of silicon clathrate Ba8Si46 studied with ultrahigh-resolution photoemission spectroscopy

T. Yokoya, A. Fukushima, T. Kiss, K. Kobayashi, S. Shin, K. Moriguchi, A. Shintani, H. Fukuoka, S. Yamanaka

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

We study the electronic structure and superconducting transition of silicon clathrate Ba8Si46 (Tc=8 K) using photoemission spectroscopy. We observe a narrow band at the Fermi level (EF), whose width (∼0.3 eV) is substantially smaller than that of band structure calculations (∼1.5 eV). Ultrahigh-resolution measurements show a superconducting gap at 5.4 K [2Δ(0)/kBTc=3.51]. Fine structures associated with phonons are observed within 70 meV of EF. These results characterize Ba8Si46 as a weak-coupling superconductor most probably driven by phonon.

Original languageEnglish
Article number172504
Pages (from-to)1725041-1725044
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number17
Publication statusPublished - Nov 1 2001
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Electronic structure and superconducting gap of silicon clathrate Ba<sub>8</sub>Si<sub>46</sub> studied with ultrahigh-resolution photoemission spectroscopy'. Together they form a unique fingerprint.

  • Cite this

    Yokoya, T., Fukushima, A., Kiss, T., Kobayashi, K., Shin, S., Moriguchi, K., Shintani, A., Fukuoka, H., & Yamanaka, S. (2001). Electronic structure and superconducting gap of silicon clathrate Ba8Si46 studied with ultrahigh-resolution photoemission spectroscopy. Physical Review B - Condensed Matter and Materials Physics, 64(17), 1725041-1725044. [172504].