Electronic bonding transition in compressed SiO2 glass

Jung Fu Lin, Hiroshi Fukui, David Prendergast, Takuo Okuchi, Yong Q. Cai, Nozomu Hiraoka, Choong Shik Yoo, Andrea Trave, Peter Eng, Michael Y. Hu, Paul Chow

Research output: Contribution to journalArticle

67 Citations (Scopus)

Abstract

Knowledge of the electronic structure of amorphous and liquid silica at high pressures is essential to understanding their complex properties ranging from silica melt in magma to silica glass in optics, electronics, and material science. Here we present oxygen near K -edge spectra of SiO2 glass to 51 GPa obtained using x-ray Raman scattering in a diamond-anvil cell. The x-ray Raman spectra below ∼10 GPa are consistent with those of quartz and coesite, whereas the spectra above ∼22 GPa are similar to that of stishovite. This pressure-induced spectral change indicates an electronic bonding transition occurring from a fourfold quartzlike to a sixfold stishovitelike configuration in SiO2 glass between 10 GPa and 22 GPa. In contrast to the irreversible densification, the electronic bonding transition is reversible upon decompression. The observed reversible bonding transition and irreversible densification call for a coherent understanding of the transformation mechanism in compressed SiO2 glass.

Original languageEnglish
Article number012201
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number1
DOIs
Publication statusPublished - 2007
Externally publishedYes

Fingerprint

Electron transitions
densification
Densification
Silicon Dioxide
Glass
Raman scattering
glass
Silica
electronics
coesite
stishovite
Raman spectra
silicon dioxide
X rays
Diamond
Quartz
x ray spectra
pressure reduction
silica glass
Materials science

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Electronic bonding transition in compressed SiO2 glass. / Lin, Jung Fu; Fukui, Hiroshi; Prendergast, David; Okuchi, Takuo; Cai, Yong Q.; Hiraoka, Nozomu; Yoo, Choong Shik; Trave, Andrea; Eng, Peter; Hu, Michael Y.; Chow, Paul.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 75, No. 1, 012201, 2007.

Research output: Contribution to journalArticle

Lin, JF, Fukui, H, Prendergast, D, Okuchi, T, Cai, YQ, Hiraoka, N, Yoo, CS, Trave, A, Eng, P, Hu, MY & Chow, P 2007, 'Electronic bonding transition in compressed SiO2 glass', Physical Review B - Condensed Matter and Materials Physics, vol. 75, no. 1, 012201. https://doi.org/10.1103/PhysRevB.75.012201
Lin, Jung Fu ; Fukui, Hiroshi ; Prendergast, David ; Okuchi, Takuo ; Cai, Yong Q. ; Hiraoka, Nozomu ; Yoo, Choong Shik ; Trave, Andrea ; Eng, Peter ; Hu, Michael Y. ; Chow, Paul. / Electronic bonding transition in compressed SiO2 glass. In: Physical Review B - Condensed Matter and Materials Physics. 2007 ; Vol. 75, No. 1.
@article{cf7508ee78a546a3bc65721a1179f57c,
title = "Electronic bonding transition in compressed SiO2 glass",
abstract = "Knowledge of the electronic structure of amorphous and liquid silica at high pressures is essential to understanding their complex properties ranging from silica melt in magma to silica glass in optics, electronics, and material science. Here we present oxygen near K -edge spectra of SiO2 glass to 51 GPa obtained using x-ray Raman scattering in a diamond-anvil cell. The x-ray Raman spectra below ∼10 GPa are consistent with those of quartz and coesite, whereas the spectra above ∼22 GPa are similar to that of stishovite. This pressure-induced spectral change indicates an electronic bonding transition occurring from a fourfold quartzlike to a sixfold stishovitelike configuration in SiO2 glass between 10 GPa and 22 GPa. In contrast to the irreversible densification, the electronic bonding transition is reversible upon decompression. The observed reversible bonding transition and irreversible densification call for a coherent understanding of the transformation mechanism in compressed SiO2 glass.",
author = "Lin, {Jung Fu} and Hiroshi Fukui and David Prendergast and Takuo Okuchi and Cai, {Yong Q.} and Nozomu Hiraoka and Yoo, {Choong Shik} and Andrea Trave and Peter Eng and Hu, {Michael Y.} and Paul Chow",
year = "2007",
doi = "10.1103/PhysRevB.75.012201",
language = "English",
volume = "75",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "1",

}

TY - JOUR

T1 - Electronic bonding transition in compressed SiO2 glass

AU - Lin, Jung Fu

AU - Fukui, Hiroshi

AU - Prendergast, David

AU - Okuchi, Takuo

AU - Cai, Yong Q.

AU - Hiraoka, Nozomu

AU - Yoo, Choong Shik

AU - Trave, Andrea

AU - Eng, Peter

AU - Hu, Michael Y.

AU - Chow, Paul

PY - 2007

Y1 - 2007

N2 - Knowledge of the electronic structure of amorphous and liquid silica at high pressures is essential to understanding their complex properties ranging from silica melt in magma to silica glass in optics, electronics, and material science. Here we present oxygen near K -edge spectra of SiO2 glass to 51 GPa obtained using x-ray Raman scattering in a diamond-anvil cell. The x-ray Raman spectra below ∼10 GPa are consistent with those of quartz and coesite, whereas the spectra above ∼22 GPa are similar to that of stishovite. This pressure-induced spectral change indicates an electronic bonding transition occurring from a fourfold quartzlike to a sixfold stishovitelike configuration in SiO2 glass between 10 GPa and 22 GPa. In contrast to the irreversible densification, the electronic bonding transition is reversible upon decompression. The observed reversible bonding transition and irreversible densification call for a coherent understanding of the transformation mechanism in compressed SiO2 glass.

AB - Knowledge of the electronic structure of amorphous and liquid silica at high pressures is essential to understanding their complex properties ranging from silica melt in magma to silica glass in optics, electronics, and material science. Here we present oxygen near K -edge spectra of SiO2 glass to 51 GPa obtained using x-ray Raman scattering in a diamond-anvil cell. The x-ray Raman spectra below ∼10 GPa are consistent with those of quartz and coesite, whereas the spectra above ∼22 GPa are similar to that of stishovite. This pressure-induced spectral change indicates an electronic bonding transition occurring from a fourfold quartzlike to a sixfold stishovitelike configuration in SiO2 glass between 10 GPa and 22 GPa. In contrast to the irreversible densification, the electronic bonding transition is reversible upon decompression. The observed reversible bonding transition and irreversible densification call for a coherent understanding of the transformation mechanism in compressed SiO2 glass.

UR - http://www.scopus.com/inward/record.url?scp=33846367792&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846367792&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.75.012201

DO - 10.1103/PhysRevB.75.012201

M3 - Article

AN - SCOPUS:33846367792

VL - 75

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 1

M1 - 012201

ER -