Electron spin resonance study of a platinum-manganese complex in silicon

T. Ishiyama, N. Murakami, Y. Kamiura, Yoshifumi Yamashita

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We observed ESR signals related to Pt and Mn in both n-type and p-type Si. The observed hyperfine structure clearly indicates that the Pt-Mn complex involves one Pt atom and one Mn atom. The anisotropic g-tensor obtained by analyzing the angular dependence of the ESR signals indicates the trigonal (C3v) symmetry with the g-values of g|| = 2.2, g = 2.1, and the g|| axis along the 〈1 1 1〉 direction. Since it has been known that isolated Pt and Mn atoms occupy substitutional and interstitial sites in Si, respectively, we expect that the Pt-Mn complex consists of a substitutional Pt and an interstitial Mn. In addition, we investigated the dissociation of the complex by thermal treatment at 350-400 °C. The activation energy for the dissociation was determined to be 0.96 eV, which was a little higher than that for the diffusion of interstitial Mn in Si. We assume that interstitial Mn diffuses away, leaving a substitutional Pt atom after the dissociation of the Pt-Mn complex.

Original languageEnglish
Pages (from-to)198-201
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume159-160
Issue numberC
DOIs
Publication statusPublished - Mar 15 2009

Fingerprint

Silicon
Manganese
Platinum
Paramagnetic resonance
manganese
electron paramagnetic resonance
interstitials
platinum
Atoms
silicon
dissociation
atoms
hyperfine structure
Tensors
Activation energy
Heat treatment
tensors
activation energy
symmetry

Keywords

  • Dissociation
  • Electron spin resonance
  • Manganese
  • Platinum
  • Silicon

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Electron spin resonance study of a platinum-manganese complex in silicon. / Ishiyama, T.; Murakami, N.; Kamiura, Y.; Yamashita, Yoshifumi.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 159-160, No. C, 15.03.2009, p. 198-201.

Research output: Contribution to journalArticle

@article{8fd48741eab84ad3871f69b166d8ccb5,
title = "Electron spin resonance study of a platinum-manganese complex in silicon",
abstract = "We observed ESR signals related to Pt and Mn in both n-type and p-type Si. The observed hyperfine structure clearly indicates that the Pt-Mn complex involves one Pt atom and one Mn atom. The anisotropic g-tensor obtained by analyzing the angular dependence of the ESR signals indicates the trigonal (C3v) symmetry with the g-values of g|| = 2.2, g⊥ = 2.1, and the g|| axis along the 〈1 1 1〉 direction. Since it has been known that isolated Pt and Mn atoms occupy substitutional and interstitial sites in Si, respectively, we expect that the Pt-Mn complex consists of a substitutional Pt and an interstitial Mn. In addition, we investigated the dissociation of the complex by thermal treatment at 350-400 °C. The activation energy for the dissociation was determined to be 0.96 eV, which was a little higher than that for the diffusion of interstitial Mn in Si. We assume that interstitial Mn diffuses away, leaving a substitutional Pt atom after the dissociation of the Pt-Mn complex.",
keywords = "Dissociation, Electron spin resonance, Manganese, Platinum, Silicon",
author = "T. Ishiyama and N. Murakami and Y. Kamiura and Yoshifumi Yamashita",
year = "2009",
month = "3",
day = "15",
doi = "10.1016/j.mseb.2008.10.018",
language = "English",
volume = "159-160",
pages = "198--201",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "C",

}

TY - JOUR

T1 - Electron spin resonance study of a platinum-manganese complex in silicon

AU - Ishiyama, T.

AU - Murakami, N.

AU - Kamiura, Y.

AU - Yamashita, Yoshifumi

PY - 2009/3/15

Y1 - 2009/3/15

N2 - We observed ESR signals related to Pt and Mn in both n-type and p-type Si. The observed hyperfine structure clearly indicates that the Pt-Mn complex involves one Pt atom and one Mn atom. The anisotropic g-tensor obtained by analyzing the angular dependence of the ESR signals indicates the trigonal (C3v) symmetry with the g-values of g|| = 2.2, g⊥ = 2.1, and the g|| axis along the 〈1 1 1〉 direction. Since it has been known that isolated Pt and Mn atoms occupy substitutional and interstitial sites in Si, respectively, we expect that the Pt-Mn complex consists of a substitutional Pt and an interstitial Mn. In addition, we investigated the dissociation of the complex by thermal treatment at 350-400 °C. The activation energy for the dissociation was determined to be 0.96 eV, which was a little higher than that for the diffusion of interstitial Mn in Si. We assume that interstitial Mn diffuses away, leaving a substitutional Pt atom after the dissociation of the Pt-Mn complex.

AB - We observed ESR signals related to Pt and Mn in both n-type and p-type Si. The observed hyperfine structure clearly indicates that the Pt-Mn complex involves one Pt atom and one Mn atom. The anisotropic g-tensor obtained by analyzing the angular dependence of the ESR signals indicates the trigonal (C3v) symmetry with the g-values of g|| = 2.2, g⊥ = 2.1, and the g|| axis along the 〈1 1 1〉 direction. Since it has been known that isolated Pt and Mn atoms occupy substitutional and interstitial sites in Si, respectively, we expect that the Pt-Mn complex consists of a substitutional Pt and an interstitial Mn. In addition, we investigated the dissociation of the complex by thermal treatment at 350-400 °C. The activation energy for the dissociation was determined to be 0.96 eV, which was a little higher than that for the diffusion of interstitial Mn in Si. We assume that interstitial Mn diffuses away, leaving a substitutional Pt atom after the dissociation of the Pt-Mn complex.

KW - Dissociation

KW - Electron spin resonance

KW - Manganese

KW - Platinum

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=67349217860&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67349217860&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2008.10.018

DO - 10.1016/j.mseb.2008.10.018

M3 - Article

VL - 159-160

SP - 198

EP - 201

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - C

ER -