Electron spin resonance of palladium-related defect in silicon

T. Ishiyama, S. Kimura, Y. Kamiura, Y. Yamashita

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A different Pd-related defect from a substitutional Pd with (C2v) symmetry was detected by ESR measurement. New ESR signal of the Pd-related defect showed different g-value and symmetry from those of the substitutional Pd. The Pd-related defect has anisotropic character of monoclinic (C1h) symmetry. The calculated g-values are g1=1.97, g2=2.03, g3=2.16, and the g1 axis is along 〈1 1 0〉 direction. The g2 and g3 axes are perpendicular to the g1 axis, and the g2 axis is rotated from 〈1 0 0〉 to 〈1 1 1〉 direction at the angle of 51°. In addition to the Pd-related defect, we have found other ESR signals in Pd and hydrogen-diffused Si. The ESR signals showed the hyperfine structure of hydrogen. Therefore, it is though that the ESR signals are originated from Pd-H complex defect.

Original languageEnglish
Pages (from-to)4586-4589
Number of pages4
JournalPhysica B: Condensed Matter
Volume404
Issue number23-24
DOIs
Publication statusPublished - Dec 15 2009

Keywords

  • Defect structure
  • Electron spin resonance
  • Hydrogen
  • Palladium
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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