Cu-doped ZnO and AlN films both exhibiting room-temperature (RT) ferromagnetism (FM) were deposited by helicon magnetron sputtering. Magnetic anisotropy was observed for all the films; saturated magnetization was larger under the applied field perpendicular to the sample surface than the in-plane field, which indicates intrinsic ferromagnetism. The easy axis of magnetization was along the [0 0 0 2] direction. Electron spin resonance (ESR) analysis showed that spins tended to align in a perpendicular direction to the surface, which might account for the observed magnetic anisotropy.
- Diluted magnetic semiconductor
- Electron spin resonance (ESR)
- Magnetic anisotropy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering