Electron spin resonance (ESR) analysis of Cu-doped ZnO and AlN films

Fan Yong Ran, M. Subramanian, Masaki Tanemura, Yasuhiko Hayashi, Takehiko Hihara

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Cu-doped ZnO and AlN films both exhibiting room-temperature (RT) ferromagnetism (FM) were deposited by helicon magnetron sputtering. Magnetic anisotropy was observed for all the films; saturated magnetization was larger under the applied field perpendicular to the sample surface than the in-plane field, which indicates intrinsic ferromagnetism. The easy axis of magnetization was along the [0 0 0 2] direction. Electron spin resonance (ESR) analysis showed that spins tended to align in a perpendicular direction to the surface, which might account for the observed magnetic anisotropy.

Original languageEnglish
Pages (from-to)3952-3954
Number of pages3
JournalPhysica B: Condensed Matter
Volume405
Issue number18
DOIs
Publication statusPublished - Sep 15 2010
Externally publishedYes

Fingerprint

Ferromagnetism
Magnetic anisotropy
ferromagnetism
Paramagnetic resonance
Magnetization
electron paramagnetic resonance
Helicons
magnetization
anisotropy
Magnetron sputtering
magnetron sputtering
room temperature
Temperature
Direction compound

Keywords

  • Diluted magnetic semiconductor
  • Electron spin resonance (ESR)
  • Magnetic anisotropy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Electron spin resonance (ESR) analysis of Cu-doped ZnO and AlN films. / Ran, Fan Yong; Subramanian, M.; Tanemura, Masaki; Hayashi, Yasuhiko; Hihara, Takehiko.

In: Physica B: Condensed Matter, Vol. 405, No. 18, 15.09.2010, p. 3952-3954.

Research output: Contribution to journalArticle

Ran, Fan Yong ; Subramanian, M. ; Tanemura, Masaki ; Hayashi, Yasuhiko ; Hihara, Takehiko. / Electron spin resonance (ESR) analysis of Cu-doped ZnO and AlN films. In: Physica B: Condensed Matter. 2010 ; Vol. 405, No. 18. pp. 3952-3954.
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