Electron Beam Nanolithography of β-Ketoester Modified Aluminium Tri-Sec-Butoxide

M. S M Saifullah, Dae Joon Kang, K. R V Subramanian, M. E. Welland, K. Yamazaki, K. Kurihara

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Electron beam-sensitive spin-coatable Al2O3 resists were prepared by chemically modifying aluminium tri-sec-butoxide with various β-ketoesters (R-acetoacetates, R = methyl, ethyl, isopropyl, isobutyl, isoamyl, heptyl, benzyl and 2-[methacryloyloxy] ethyl) in isopropyl alcohol. The reaction product was a chelated complex. With increasing molecular weight of R, there was an increase in electron beam sensitivity of spin-coatable Al2O3 resists. This appears to be due to decreased stability of the chelated complex formed by higher molecular weight R-acetoacetates. Fourier transform infrared (FTIR) spectroscopy studies indicate that exposure to an electron beam results in the breakdown of chelate rings, making the exposed area insoluble during development. Electron beam nanolithography produced 8 nm wide lines. These are the smallest oxide lines written using a sol-gel-based resist.

Original languageEnglish
Pages (from-to)5-10
Number of pages6
JournalJournal of Sol-Gel Science and Technology
Volume29
Issue number1
DOIs
Publication statusPublished - Jan 2004
Externally publishedYes

Fingerprint

Nanolithography
Aluminum
Acetoacetates
Electron beams
electron beams
aluminum
molecular weight
Molecular weight
isopropyl alcohol
2-Propanol
Reaction products
chelates
reaction products
Oxides
Sol-gels
Fourier transform infrared spectroscopy
Alcohols
breakdown
infrared spectroscopy
gels

Keywords

  • Aluminium oxide
  • Chelating agents
  • Electron beam nanolithography
  • Inorganic resists
  • Metal alkoxides

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Saifullah, M. S. M., Kang, D. J., Subramanian, K. R. V., Welland, M. E., Yamazaki, K., & Kurihara, K. (2004). Electron Beam Nanolithography of β-Ketoester Modified Aluminium Tri-Sec-Butoxide. Journal of Sol-Gel Science and Technology, 29(1), 5-10. https://doi.org/10.1023/B:JSST.0000016131.35342.2f

Electron Beam Nanolithography of β-Ketoester Modified Aluminium Tri-Sec-Butoxide. / Saifullah, M. S M; Kang, Dae Joon; Subramanian, K. R V; Welland, M. E.; Yamazaki, K.; Kurihara, K.

In: Journal of Sol-Gel Science and Technology, Vol. 29, No. 1, 01.2004, p. 5-10.

Research output: Contribution to journalArticle

Saifullah, MSM, Kang, DJ, Subramanian, KRV, Welland, ME, Yamazaki, K & Kurihara, K 2004, 'Electron Beam Nanolithography of β-Ketoester Modified Aluminium Tri-Sec-Butoxide', Journal of Sol-Gel Science and Technology, vol. 29, no. 1, pp. 5-10. https://doi.org/10.1023/B:JSST.0000016131.35342.2f
Saifullah, M. S M ; Kang, Dae Joon ; Subramanian, K. R V ; Welland, M. E. ; Yamazaki, K. ; Kurihara, K. / Electron Beam Nanolithography of β-Ketoester Modified Aluminium Tri-Sec-Butoxide. In: Journal of Sol-Gel Science and Technology. 2004 ; Vol. 29, No. 1. pp. 5-10.
@article{1cdc777fd24c435bbc504e38cb9bdc41,
title = "Electron Beam Nanolithography of β-Ketoester Modified Aluminium Tri-Sec-Butoxide",
abstract = "Electron beam-sensitive spin-coatable Al2O3 resists were prepared by chemically modifying aluminium tri-sec-butoxide with various β-ketoesters (R-acetoacetates, R = methyl, ethyl, isopropyl, isobutyl, isoamyl, heptyl, benzyl and 2-[methacryloyloxy] ethyl) in isopropyl alcohol. The reaction product was a chelated complex. With increasing molecular weight of R, there was an increase in electron beam sensitivity of spin-coatable Al2O3 resists. This appears to be due to decreased stability of the chelated complex formed by higher molecular weight R-acetoacetates. Fourier transform infrared (FTIR) spectroscopy studies indicate that exposure to an electron beam results in the breakdown of chelate rings, making the exposed area insoluble during development. Electron beam nanolithography produced 8 nm wide lines. These are the smallest oxide lines written using a sol-gel-based resist.",
keywords = "Aluminium oxide, Chelating agents, Electron beam nanolithography, Inorganic resists, Metal alkoxides",
author = "Saifullah, {M. S M} and Kang, {Dae Joon} and Subramanian, {K. R V} and Welland, {M. E.} and K. Yamazaki and K. Kurihara",
year = "2004",
month = "1",
doi = "10.1023/B:JSST.0000016131.35342.2f",
language = "English",
volume = "29",
pages = "5--10",
journal = "Journal of Sol-Gel Science and Technology",
issn = "0928-0707",
publisher = "Springer Netherlands",
number = "1",

}

TY - JOUR

T1 - Electron Beam Nanolithography of β-Ketoester Modified Aluminium Tri-Sec-Butoxide

AU - Saifullah, M. S M

AU - Kang, Dae Joon

AU - Subramanian, K. R V

AU - Welland, M. E.

AU - Yamazaki, K.

AU - Kurihara, K.

PY - 2004/1

Y1 - 2004/1

N2 - Electron beam-sensitive spin-coatable Al2O3 resists were prepared by chemically modifying aluminium tri-sec-butoxide with various β-ketoesters (R-acetoacetates, R = methyl, ethyl, isopropyl, isobutyl, isoamyl, heptyl, benzyl and 2-[methacryloyloxy] ethyl) in isopropyl alcohol. The reaction product was a chelated complex. With increasing molecular weight of R, there was an increase in electron beam sensitivity of spin-coatable Al2O3 resists. This appears to be due to decreased stability of the chelated complex formed by higher molecular weight R-acetoacetates. Fourier transform infrared (FTIR) spectroscopy studies indicate that exposure to an electron beam results in the breakdown of chelate rings, making the exposed area insoluble during development. Electron beam nanolithography produced 8 nm wide lines. These are the smallest oxide lines written using a sol-gel-based resist.

AB - Electron beam-sensitive spin-coatable Al2O3 resists were prepared by chemically modifying aluminium tri-sec-butoxide with various β-ketoesters (R-acetoacetates, R = methyl, ethyl, isopropyl, isobutyl, isoamyl, heptyl, benzyl and 2-[methacryloyloxy] ethyl) in isopropyl alcohol. The reaction product was a chelated complex. With increasing molecular weight of R, there was an increase in electron beam sensitivity of spin-coatable Al2O3 resists. This appears to be due to decreased stability of the chelated complex formed by higher molecular weight R-acetoacetates. Fourier transform infrared (FTIR) spectroscopy studies indicate that exposure to an electron beam results in the breakdown of chelate rings, making the exposed area insoluble during development. Electron beam nanolithography produced 8 nm wide lines. These are the smallest oxide lines written using a sol-gel-based resist.

KW - Aluminium oxide

KW - Chelating agents

KW - Electron beam nanolithography

KW - Inorganic resists

KW - Metal alkoxides

UR - http://www.scopus.com/inward/record.url?scp=1842451896&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1842451896&partnerID=8YFLogxK

U2 - 10.1023/B:JSST.0000016131.35342.2f

DO - 10.1023/B:JSST.0000016131.35342.2f

M3 - Article

AN - SCOPUS:1842451896

VL - 29

SP - 5

EP - 10

JO - Journal of Sol-Gel Science and Technology

JF - Journal of Sol-Gel Science and Technology

SN - 0928-0707

IS - 1

ER -