Electron Beam Nanolithography of β-Ketoester Modified Aluminium Tri-Sec-Butoxide

M. S.M. Saifullah, Dae Joon Kang, K. R.V. Subramanian, M. E. Welland, K. Yamazaki, K. Kurihara

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Electron beam-sensitive spin-coatable Al2O3 resists were prepared by chemically modifying aluminium tri-sec-butoxide with various β-ketoesters (R-acetoacetates, R = methyl, ethyl, isopropyl, isobutyl, isoamyl, heptyl, benzyl and 2-[methacryloyloxy] ethyl) in isopropyl alcohol. The reaction product was a chelated complex. With increasing molecular weight of R, there was an increase in electron beam sensitivity of spin-coatable Al2O3 resists. This appears to be due to decreased stability of the chelated complex formed by higher molecular weight R-acetoacetates. Fourier transform infrared (FTIR) spectroscopy studies indicate that exposure to an electron beam results in the breakdown of chelate rings, making the exposed area insoluble during development. Electron beam nanolithography produced 8 nm wide lines. These are the smallest oxide lines written using a sol-gel-based resist.

Original languageEnglish
Pages (from-to)5-10
Number of pages6
JournalJournal of Sol-Gel Science and Technology
Volume29
Issue number1
DOIs
Publication statusPublished - Jan 1 2004

Keywords

  • Aluminium oxide
  • Chelating agents
  • Electron beam nanolithography
  • Inorganic resists
  • Metal alkoxides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Biomaterials
  • Condensed Matter Physics
  • Materials Chemistry

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